ELECTROPHYSICAL PROPERTIES OF MULTILAYERED PHOTO-SENSITIVE STRUCTURES WITH BARRIERS OF METAL-SEMICONDUCTOR
The results of studies aimed at creating photodiode structures with a spectral range of 0.85÷0.9 µm and 1.31÷1.55 µm with an area of 3x4 mm2, which are obtained by successive vacuum deposition of cadmium sulfide and indium phosphide layers on a doped gallium arsenide substrate doped with oxygen with a specific resistance of 1∙107 Ohm∙sm. A distinctive feature of the obtained Au-vGaAs photodiode: O-nCdS-nInP-Au structures is the two-sided sensitivity and the presence of the amplification effect of the primary photocurrent (especially in the impurity region of the spectrum) and low dark current values (of the order of 10 nA) at room temperature. The speed is in the range from 100 to 250 ns, which opens up the possibility for their use, at low capacitance values, in open optical communication systems.
Karimov, Abdulaziz V.; Yodgorova, Dilbara M.; Giyasova, Feruza A.; and Abdulkhaev, Oybek A.
"ELECTROPHYSICAL PROPERTIES OF MULTILAYERED PHOTO-SENSITIVE STRUCTURES WITH BARRIERS OF METAL-SEMICONDUCTOR,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 18.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss1/18