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Euroasian Journal of Semiconductors Science and Engineering

Article Title

INFLUENCE OF RHODIUM AND IRIDIUM IMPURITY ATOMS ON THE CAPACITIVE CHARACTERISTICS OF Si-SiО2 STRUCTURES

Abstract

It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.

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