The ZnXSn1-XSe solid solution films were fabricated by the chemical molecular beam deposition (CMBD) method. The sources used were ZnSe and SnSe compounds of stoichiometric composition at the substrate temperature of 5600С. The morphological and electrophysical properties of the ZnXSn1-XSe solid solution films are investigated. Scanning electron microscope images showed that the grain sizes of the films are 8÷20 microns. The structural parameters of the obtained films are given. The electrical conductivity of the films was 15 ÷ 1 • 10-6 (Ohm·cm) -1 depending on the composition of the solid solution.
Kuchkarov, Kudrat M.; Razykov, Takhir M.; Ergashev, Bobur A.; and Yuldoshov, Rukhiddin T.
"STUDY OF THE MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF FILMS OF SOLID SOLUTION ZnXSn1-хSe OBTAINED
BY THE METHOD OF CMBD,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 11.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss1/11