Euroasian Journal of Semiconductors Science and Engineering
Most Popular Papers *
DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS
Sh. Daliev, A. Paluanova, J. Ergashev, and A. Rakhimov
FEATURES OF SILICON p-n STRUCTURES WITH A LARGE SENSITIVE SURFACE AND A VOLUME CHARGE AREA
R. Muminov, G. Ergashev, B. Radjapov, and E. Rumyantseva
MULTICHANNEL OPTICAL SPECTRUM RECORDER FOR MICROELEMENTS DETERMINATION
N. Jeenbaev, A. Chylymov, R. Tashtanov, and G. Dorjueva
THE INFLUENCE OF EXTERNAL FACTORS ON PROPERTIES OF IRRADIATED SILICON MIS STRUCTURES
Z. Khusanov, Kh. Daliev, Allayarov, and U. Erugliyev
DIFFUSION OF CLUSTERS OF IMPURITY NICKEL ATOMS IN A SILICON LATTICE
M. Bakhadirkhanov, B. Ismaylov, and S. Tachilin
ABOUT THE CHARACTERISTICS OF MULTILAYER THIN-FILM STRUCTURES WITH DYES BASED ON TITANIUM DIOXIDE
O. Mamatkarimov, A. Abdukarimov, and Oktamaliev
CRITERIA FOR OBTAINING COMPENSATED NICKEL SILICON
Sayfillo Saidovich Nasriddinov, Shuxrat Ismailov, Daryo Esbergenov, and Muzaffar Mannonov
DETERMINING THE LIFETIME OF MINORITY CHARGE CARRIERS AND IRON IMPURITY CONCENTRATION IN SEMICONDUCTOR STRUCTURES WITH SUBMICRON LAYERS
Anatoly Zharin, Kanstantsin Pantsialeyeu, Aleksandr Svistun, and Kanstantsin Tyavlovsky
NEW ENERGY AND RESOURCE SAVING TECHNOLOGIES FOR PRODUCING SILICON AND ITS ALLOYS
Kurbanov, Abdurakhmanov, Ashurov, and Nuraliev
NOVEL ENGINEERED MATERIALS FOR INTEGRAL PHOTO ELEMENTS
N. Zikrillayev and E. Saitov
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» Updated as of 03/01/21.