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Euroasian Journal of Semiconductors Science and Engineering

Most Popular Papers *

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VOLT-AMPERE CHARACTERISTICS OF MOS STRUCTURES Al-Al2O3-p-CdTe-Mo – IN THE FORWARD DIRECTION OF CURRENT
Abatbay K. Uteniyazov, Kanatbay A. Ismailov, and Fatima T. Srajatdinova

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LASER TESTING OF SILICON WAFERS
Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, and Nigora A. N.A. Akbarova

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INFRARED SPECTROSCOPY OF SILICON DOPED BY STANNUM AND MANGANESE
Sharifa B. Utamuradova, Ravshanbek M. Ergashev, and Khusniddin J. Matchanov

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THE PHOTOLUMINESCENCE SPECTRA OF POWDERS OF ZINC OXIDE WITH LASER EXCITATION
Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, and Abdulla K. Kurbonov

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OPTICAL POWER METER FOR DIAGNOSTICS OF FIBER-OPTIC COMMUNICATION LINES AND DIGITAL MULTIMETER
Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, and Gulkhayo T. Murodillaeva

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INFLUENCE OF HEAT TREATMENT ON THE BEHAVIOR OF DEEP LEVELS IN SILICON DOPED BY TUNGSTEN
Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, and Anifa D. Paluanova

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ORGANIC PHOTODIODES ON THE BASIS OF COTTON FIBER/POLYMER COMPOSITE
Jonibek J. Hamdamov, Anvar S. Zakirov, and Abdugafur T. Mamadalimov

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THE PRINCIPLES OF INCREASING THE SENSITIVITY OF TRANSISTOR STRUCTURES TO EXTERNAL INFLUENCES
Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, and Akmal A. Turaev

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CAPACITIVE SPECTROSCOPY OF DEFECTS IN SEMICONDUCTORS, DOPED BY ATOMS OF GADOLINIUM
Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, and Uktam K. Erugliev

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» Updated as of 05/11/20.