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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering
 

The journal publishes articles in the following areas:

-semiconductor physics;
-semiconductors material science;
-semiconductor microelectronics;
-semiconductor radiation physics.

Recent Content

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NEW THERMOELECTRIC MATERIALS
G. Abdurakhmanov, K Mukimov, A Esbergenova, and S. Mamatqulova

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OBTAINING FULLERENE-CONTAINING THIN FILMS FROM C70 NANOPARTICLES
U. Makhmanov, A. Kokhkharov, and S. Bakhramov

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TENZOSTIMULATED CURRENT RELAXATION IN SURFACE-BARRIER DIODE STRUCTURES
O. Mamatkarimov, O. Khimmatkulov, and I. Tursunov

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IMPURITY-IMPURITY INTERACTION IN SILICON DOPED WITH MANGANESE AND NICKEL
Sh. Utamuradova, Sh. Yusupova, and K. Fayzullaev

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OPTIMIZATION OF OPERATING MODES OF THE HOUSEHOLD PHOTOVOLTAIC SYSTEM
E. Saitov, J. Toshov, Sh. Umarov, and B. Nasriddinov

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METHOD FOR DETERMINING THE CONTACT RESISTANCE OF THERMOELEMENTS
T. Azimov, K. Gajnazarova, and K. Onarkulov

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STUDYING THE PROPERTIES OF GADOLINIUM-DOPED SILICON
Sh. Norkulov, Kh. Daliev, Z. Khusanov, and Kh. Utemuratova

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TEMPERATURE SENSITIVITY OF DIODE TEMPERATURE SENSOR WITH DEPLETED BASE REGION
R. Bebitov, O. Abdulkhaev, T. Juraboyev, and A. Rakhmatov

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INFLUENCE OF THE CLUSTERS OF IMPURIENT NICKEL ATOMS ON THE CRYSTALLINE SILICON STRUCTURE
N. Turgunov, S. Zainabidinov, Sh. Akbarov, and E. Berkinov

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SEMICONDUCTOR WAFERS TESTING BASED ON ELECTRON WORK FUNCTION OF SURFACE
K. Panteleev, A. Zharin, V. Mikitsevich, and O. Gusev

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INFLUENCE OF HIGH RADIATION DOSES ON THE BEHAVIOR OF TRANSITION ELEMENT IMPURITIES IN SILICON
Sharifa Bekmuradovna Utamuradova, Zafar Olimbekov, Aysara Uteniyazova, and Dilmurod Abdujabbor ugli Rakhmanov

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POSSIBILITIES OF USING HIGHLY COMPENSATED SILICON IN ELECTRONICS
Kutub Ayupov, Giyosiddin Mavlonov, Sirojiddin Valiyev, and Shergoziyev

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CRITERIA FOR OBTAINING COMPENSATED NICKEL SILICON
Sayfillo Saidovich Nasriddinov, Shuxrat Ismailov, Daryo Esbergenov, and Muzaffar Mannonov

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COMPACT SPECKLE INTERFEROMETER FOR DIGITAL SHEAROGRAPHY
Zakir Tahirovich Azamatov, Valeriy Kim, and Murod Akbarali ugli Yoldoshev

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THE INFLUENCE OF THE MICROWAVE FIELD ON THE CHARACTERISTICS OF THE p-n JUNCTION
Gafur Gulyamov, Gulomqodir Dadamirzaev, Muhammadjon Dadamirzayev, and Mamura Kosimova

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THE POSITIVE FEEDBACK AMPLIFICATION MECHANISM OF THE INJECTION PHOTODIODE BASED ON LARGE-BLOCK CdTe FILMS
Abatbay Uteniyazov, Kanatbay Ismailov, Makset Nsanbaev, and Elmira Ysenbaeva

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STRUCTURAL FEATURES OF THE THIN-FILM N-ZnO/P-Si HETEROJUNCTION
Rembeza Stanislav, Akramjon Boboev, Tat'yana Men'shikova, and Tamara Svistova

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PHOTOELECTRIC MEASUREMENTS OF SELENIUM DOPED SILICON
A. Mavlyanov, A. Urakov, and A. Narbayev

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INVESTIGATION OF DEFECT FORMATION PROCESSES IN SILICON WITH IRON IMPURITY
Shakhruh Hojakbarovich Daliyev, Jonibek Jumayevich Khamdamov, Yuldoshali Ravshanov, and Daryabay Esbergenov

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MULTICHANNEL OPTICAL SPECTRUM RECORDER FOR MICROELEMENTS DETERMINATION
N. Jeenbaev, A. Chylymov, R. Tashtanov, and G. Dorjueva

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INVESTIGATION OF DEGREDATION OF ORGANIC SOLAR CELLS
E. Zakhidov, I. Tajibaev, M. Imomov, and V. Quvondikov

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THE EFFICIENCY OF SOLAR DRYERS
K. Abduraxmanov and U. Tahirov

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TECHNOLOGICAL FEATURES OF OBTAINING STRENGTH SENSITIVE POLYCRYSTALLINE FILMS Bi2-XSbXTe3
M. Onarkulov, S. Nasriddinov, Sh. Yuldashev, and L. Yunusaliev

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FERMI THEORY ON DIMENSION EFFECTS IN MULTIPLE EXCITON GENERATION
M. Marasulov, N. Turaeva, and B. Oksengendler

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DEFECT FORMATION DURING LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH ION IMPURITIES
Sh. Utamuradova, A. Uteniyazova, K. Fayzullaev, and E. Naurzalieva

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DIFFUSION OF CLUSTERS OF IMPURITY NICKEL ATOMS IN A SILICON LATTICE
M. Bakhadirkhanov, B. Ismaylov, and S. Tachilin

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INVESTIGATION THE DISTRIBUTION OF DOT AND MICRODEFECTS IN EPITAXIAL LAYERS OF ZnSe/GaAS
Muratbay Boribaevich Sharibayev and Kanatbay Abdreymovich Ismaylov

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RESEARCH OF PROPERTIES OF SILICON WITH BINARY NANOCLUSTERS WITH PARTICIPATION OF Mn AND Se ATOMS
Halmurat Mijitovich Iliev, Mamasobir Ochildiyevich Tursunov, Sergey Vladimirovich Koveshnikov, and Zafar Burxutovich Xudoynazarov

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FORMATION AND PROPERTIES OF A RUBIDIUM SILICIDE FILM OBTAINED BY LOW-ENERGY IONIC IMPLANTATION
Sayfullo Saidovich Nasriddinov and Zukhra Abdurashitovna, Tursunmetova

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A COMPOSITE PHOTODETECTOR BASED ON THE PHOTODIODE AND AVALANCHE TRANSISTOR
Abdulaziz . Vakhitovich Karimov, Anvar Azamovich Yakubov, Oybek Abdullazizovich Abdulkhaev, and Alim Adilovich Khakimov

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EQUALIZING DRIFT PROCESS FOR DEVELOPING A SEMICONDUCTOR COORDINATE-SENSITIVE DETECTOR
Ramizulla Abdullaevich Muminov; Ahmet Kuvanchbekovich Saymbetov; Yorkin Qaxramonovich Toshmurodov; and Mahmudjon , Otamurodovich Yavqochdiyev

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SPECTRA OF ENERGY LEVELS OF NANO-SCALE "QUASIMOLECULES" OF SULFUR IN SILICON
Shoikrom Inoyatovich Askarov, Bashirulla Zikrillaevich Sharipov, Shohista Kamilovna Saliyeva, and Abdulaziz Shavkatovich Mavlyanov

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PHOTOELECTRIC PROPERTIES OF VARISONIC STRUCTURES BASED ON SILICON WITH IMPURITY NANOCLUSTERS Zn and Se
Nurullа Fatkhullaevich Zikrillaev, Orzibek Bahrom ugli Tursunov, Kobiljon Kasimjon ugli Kurbonaliev, and Manzura Shoabdurakhimova

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ON INTERACTION OF MANGANESE AND ZINC IMPURITIES IN SILICON
Sharifa Bekmuradovna Utamuradova, Khudayor Iskandarovich Kalandarov, and Jonibek Jumaevich Khamdamov

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STUDY OF THE EFFECT OF GAMMA RADIATION ON STATIC CHARACTERISTICS OF SILICON EPITAXIAL-PLANAR MEDIUM POWER DIODE
Shukurullo Mustafaevich Kuliev, Alim Adilovich Khakimov, Akhmadjon Zayniddinovich Rakhmatov, and Abdulaziz Vakhitovich Karimov

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DEFECTS FORMATION IN SILICON DOPED WITH YTTERBIUM AND IRRADIATED BY ELECTRONS
Shakhrukh Khojakbarovich Daliev, Mansur Bakhrаm ugli Bekmuratov, Elmira Makhambetyarovna Naurzalieva, and Dilmurod Abdujabbor ugli Rakhmanov

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INFLUENCE OF ALKALI METALS ON THE TRANSFER OF CHARGE CARRIERS IN GRANULATED SILICON
Lutfiddin Omanovich OlimovOlimov, Boris Malikovich Abdurakhmanov, and Zarnigor Sohibova

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STRUCTURAL AND MORPHOLOGICAL STUDIES OF (GaAs)1 – x – у(Ge2)x(ZnSe)y SOLID SOLUTIONS WITH QUANTUM DOTS
Sirajiddin Zainabidinovich Zainabidinov, Amin Safarboevich Saidov, Akramjon Yuldashboevich Boboev, and Dilkhayotjon Pulatjon ugli Abdurakhimov

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STUDY OF IONIZATION PROCESSES IN TWO-ELEMENT LASER PLASMA
Sayfillo Saidovich Nasriddinov, Shukhratbek Abdipattayevich Ismoilov, Daryabay Esbergenov Muratbaevich, and Muzaffar Ibrahimovich Mannonov

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DEVELOPMENT OF A MATHEMATICAL MODEL OF SPECTRUM FORMATION IN DETECTORS BASED ON Si (Li) STRUCTURES UNDER GAMMA IRRADIATION
Ramizulla Abdullaevich Muminov, Yorkin Kakhramonovich Toshmurodov, Giyosjon Juraevich Ergashev, and Mahmudjon Otamurodovich Yavqochdiyev

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INFLUENCE OF PRESSURE ON LANDAU LEVELS OF ELECTRONS IN THE CONDUCTIVITY ZONE WITH THE PARABOLIC DISPERSION LAW
Ulugbek Inayatillyevich Erkaboev, Rustam Gulomzhonovich Rakhimov, and Nozimjon Sayidov Abdulnosirovich

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FEATURES OF ELECTROPHYSICAL PROPERTIES OF STRONGLY COMPENSATED SILICON DOPED WITH SULFUR
Qutub Sautovich Ayupov and Shakhobiddin Boytemir ogli Shergoziyev

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INFLUENCE OF DOPING IMPURITIES ON MECHANICAL AND THERMOELECTRIC PROPERTIES OF COOLING THEMOELS BASED ON BISMUTH AND ANTIMONY CHALCOGENIDES
Khojakbar Sultanovich Daliev, Tulanboy Ma'rufjonovich Azimov, and Maksadjon Karimberdievich Onarkulov

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INFLUENCE OF γ - IRRADIATION ON THERMAL SENSOR CHARACTERISTICS BASED ON Si
Sayfillo Saidovich Nasriddinov, Daryabay Muratbaevich Esbergenov, and Shukhrat Abdipattaevich Ismoilov

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CREATION OF NEW MATERIALS BASED ON DIELECTRIC FILMS USING LOW-ENERGY ION IMPLANTATION
Muradulla Tagaevich Normuradov, Dilshod Abdurazakovich Normurodov, Kuvondik Turakulovich Davronov, and Nilufar Moyli kizi Mustafayeva

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EFFECT OF TEMPERATURE ANNEALING ON THE EFFICIENCY OF NICKEL-DOPED SILICON SOLAR CELLS
Halmurat Mijitovich Iliev, Zoir Tohir ugli Kenjaev, Babir Alimdjanovich Isakov, and Nigmat Narkulov

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APPLICATION OF PHOTOLUMINESCENT ANALYSIS TO CONTROL NANOPOWDERS SINC SELENIDE AND ZINC OXIDE
Ilyos Arzimurodovich Rakhmatullaev; Vladimir Semenovich Gorelik; and Abdulla, Basic Doctoral Student of the . e-mail: Kenjaevich Kurbonov

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METHODS OF BUILDING LOAD CHARACTERISTICS OF SOLID STATE POWER AMPLIFIERS ON MOS TRANSISTORS
Vyacheslav Mikhailovich Andreev, Khayrulla Kabilovich Aripov, Axmed Mallayevich Abdullayev, and Shunkorjon Toshpulatovich Toshmatov

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SOME FEATURES OF HETEROJUNCTION OF Au-GaAs: O-nCdS-nInP-Au STRUCTURES PHOTOSENSITIVITY
Feruza Abdiazizovna Giyasova, Abdulaziz Vakhitovich Karimov, Dilbara Mustafayevna Yodgorova, and Oybek Abdullazizovich Abdulkhaev

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FEATURES OF MAGNETIC PROPERTIES OF SILICON WITH MAGNETIC NANOCLUSTERS
Giyos Haydarovich Movlonov, Sobirjon Boltayevich Isomov, Shakhboz Nizom ugli Ibodullayev, and Shahobiddin Boytemir ugli Shergoziyev

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RADIATION AND THERMAL DEFECT FORMATION IN SILICON MIS - STRUCTURES WITH IMPURITIES OF REFRACTORY ELEMENTS
Khojakbar Sultanovich Daliev, Shahrukh Khozhakbarovich Daliev, Anifa Daryabayevna Paluanova, and Zafarjon Murodovich Husanov

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INCREASING THE THERMAL STABILITY OF SILICON IN THE FORMATION OF CLUSTERS OF IMPURITY NICKEL ATOMS
Nurullo Fatkhullayevich Zikrillayev, Bayram Kanatbaevich Ismaylov, Stanislav Anatolevich Tachilin, and Sobirjon Boltayevich Isamov

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THE FLOW SENSORS OF A CONTINUOUS MEDIUM
Sayfillo Saidovich Nasriddinov and Daryabay Muratbaevich Esbergenov

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THREE-BARRIER Au/AlGaAs(n)/GaAs(p)/Ag PHOTODIODE STRUCTURES
Anvar Azamovich Yakubov, Oybek Abdullazizovich Abdulkhaev, Alim Adilovich Khakimov, and Abdulaziz Vakhitovich Karimov

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DIGITAL HOLOGRAPHIC INTERFEROMETRY IN PHYSICAL MEASUREMENTS
Zakirjan Toxirovich Аzamatov, Nurlan Niyatullayevich Bazarbayev, Mira Ruzimovna Bekchanova, and Murod Akbarali ugli Yuldoshev

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INFLUENCE OF LOW-TEMPERATURE TREATMENTS ON THE BEHAVIOR OF DEEP LEVELS IN SILICON DOPED WITH PLATINUM
Sharifa Bekmuradovna Utamuradova, Zafarbek Olimbek ugli Olimbekov, Jonibek Jumayevich Khamdamov, and Kakhramon Makhmudjanovich Fayzullaev

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FEATURES OF THE CURRENT-VOLTAGE CHARACTERISTIC OF n-GaP-p-(InSb)1-x(Sn2)x HETEROSTRUCTURE
Amin Safarbayevich Saidov, Ada Yulyevna Leyderman, Shukrullo Negmatovich Usmonov, and Umida Palvanovna Asatova

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CHARGE DISTRIBUTION OF Si IONS EMITTED BY MULTI-ELEMENT LASER PLASMA BEFORE AND AFTER γ-IRRADIATION OF THE TARGET
Toshmukhammad Bolmukhammad ugli Satiboldiev, Zakirjan Toxirovich Аzamatov, Saifillo Saidovich Nasriddinov, and Furkat Makhsutaliyevich Tojinazarov

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TENSE PROPERTIES OF SILICON WITH NANOCLUSTERS
Sabirbay Awesbay ugli Tursinbaev, Amangeldi Bazarbaevich Kamalov, Halmurat Mijitovich Iliev, and Stanislav Anatolevich Tachilin

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STUDY OF PHOTOCONDUCTIVITY SPECTRUM OF SULFUR-DOPED SILICON IN FORWARD AND BACKWARD CONNECTION MODES.
Abdulaziz Shavkatovich Mavlyanov, Erkin Berkinbayevich Khaltursunov, Muzaffar Komilovich Azizov, and Khurzoda Kozimjon qizi Mavlonova

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NEW ASPECTS OF APPLICATION OF ELEMENTS WITH ANOMALOUS PHOTOVOLTIC VOLTAGE
Raziyakhan Abdikhalikovna Nurdinova and Arofatkhan Shavkat qizi Alimjonova

 

SELECTION OF SPECTRAL CHARACTERISTICS OF A PHOTODETECTOR FOR IMPLEMENTATION OF ON-BOARD FIBER OPTICAL NETWORKS
Feruza Abduazizovna Giyasova, Ruslan Gilmullayevich Zakirov, Abdulaziz Shavkatovich Mavlyanov, and Nazokat Izatullaevna Usmonova

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ABOUT THE PHOTOSENSITIVITY OF MULTI-BARRIER PHOTODIODE STRUCTURE ON THE BASIS OF SEMI-INSULATING GaAs
Oybek Abdullazizovich Abdulkhaev, Anvar A’zamovich Yakubov, Feruza Abdiazizovna Giyasova, and Alim Adilovich Khakimov

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ANALYSIS OF THE DISTRIBUTION OF ERRORS BASED ON PROBABILISTIC CHARACTERISTICS OF THE PROBE SOLID STATE TEMPERATURE TRANSDUCERS
Anvar Tojiboevich Rakhmonov, Bakhrom Egamberdievich Egamberdiev, Stepan Fedorovich Kuznetsov, and Saifillo Saidovich Nasriddinov

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NONEQUILIBRIUM PROCESSES ON THE CONTACT SEMICONDUCTOR - GAS DISCHARGE PLASMA
Khojakbar Sultanovich Daliev, Zokirjon Khaydarov, Nosirjon Khaydarovich Yuldashev, and Kurshidjon Tolibovich Yuldashev

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SILICON SOLAR ELEMENT WITH SMALL P-N JUNCTIONS
Erkin Zunnunovich Imamov, Ramizulla Abdullaevich Muminov, Temur Asfandiyarovich Djalalov, and Xasan Narzullaevich Karimov

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TO THE THEORY OF ELECTRON STATES IN A SEMICONDUCTOR MULTI-LAYER STRUCTURE
Khojakbar Sultanovich Daliev, Vohob Rustamovich Rasulov, and Bakhodir Akhmedov

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STUDY OF THE SCHOTTKY POWER DIODES DEGRADATION UNDER 60Co -IRRADIAION
Marat Tagaev, Bakhtiyar Abdikamalov, Viktor Statov, and Saparbay Bekbergenov

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STRUCTURAL FEATURES OF (GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y SEMICONDUCTOR SOLID SOLUTION
Shakhriyor Yulchiev, Akramjon Boboev, and Johongir Usmonov

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ENERGY SPECTRUM OF DEFECTS IN SILICON WITH MOLYBDENUM ADMIXTURE
Shakhrukh Daliev, Anifa Paluanova, Kakhramon Fayzullaev, and Srajatdin Kaypnazarov

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FEATURES OF TEMPERATURE SENSITIVITY OF SILICON STRUCTURE WITH DEPLETED BASE REGION
Oybek Abdulkhaev, Rahimjon Bebitov, Alim Khakimov, and Axmad Rakhmatov

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FEATURES OF THE NEW STRUCTURE OF THE BEAM FOR THE LOAD CELL
Abdulaziz Karimov, Alim Khakimov, Damir Istamov, and Abduvakhob Karimov

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DIMENSIONAL QUANTIZATION IN A SEMICONDUCTOR QUANTUM PIT. DRESSELHOUSE MODEL
Vohob Rasulov, Rustam Rasulov, Ravshan Sultonov, and Ikboljon Eshboltaev

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LASER TESTING OF SILICON WAFERS
Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, and Nigora A. N.A. Akbarova

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CAPACITIVE SPECTROSCOPY OF DEFECTS IN SEMICONDUCTORS, DOPED BY ATOMS OF GADOLINIUM
Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, and Uktam K. Erugliev

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FEATURES THE GENERALITIES OF I-V CURVE FORMATION IN MOSFET WITH A COMMON DRAIN
Khayrulla K. Aripov, Akhmed M. Abdullayev, and Shunkurjon T. Toshmatov

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STUDY OF THE MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF FILMS OF SOLID SOLUTION ZnXSn1-хSe OBTAINED BY THE METHOD OF CMBD
Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, and Rukhiddin T. Yuldoshov

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INFRARED SPECTROSCOPY OF SILICON DOPED BY STANNUM AND MANGANESE
Sharifa B. Utamuradova, Ravshanbek M. Ergashev, and Khusniddin J. Matchanov

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STRUCTURAL FEATURES OF THE SOLID SOLUTION (GaAs)1-x-y(Ge2)x(ZnSe)y WITH QUANTUM DOTS (0≤x≤0,17; 0≤y≤0,14)
Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, and Hkushruy A. Makhmudov

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INFLUENCE OF HEAT TREATMENT ON THE BEHAVIOR OF DEEP LEVELS IN SILICON DOPED BY TUNGSTEN
Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, and Anifa D. Paluanova

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ORGANIC PHOTODIODES ON THE BASIS OF COTTON FIBER/POLYMER COMPOSITE
Jonibek J. Hamdamov, Anvar S. Zakirov, and Abdugafur T. Mamadalimov

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THE PHOTOLUMINESCENCE SPECTRA OF POWDERS OF ZINC OXIDE WITH LASER EXCITATION
Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, and Abdulla K. Kurbonov

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OPTICAL POWER METER FOR DIAGNOSTICS OF FIBER-OPTIC COMMUNICATION LINES AND DIGITAL MULTIMETER
Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, and Gulkhayo T. Murodillaeva

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THE PRINCIPLES OF INCREASING THE SENSITIVITY OF TRANSISTOR STRUCTURES TO EXTERNAL INFLUENCES
Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, and Akmal A. Turaev

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VOLT-AMPERE CHARACTERISTICS OF MOS STRUCTURES Al-Al2O3-p-CdTe-Mo – IN THE FORWARD DIRECTION OF CURRENT
Abatbay K. Uteniyazov, Kanatbay A. Ismailov, and Fatima T. Srajatdinova

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INFLUENCE OF RHODIUM AND IRIDIUM IMPURITY ATOMS ON THE CAPACITIVE CHARACTERISTICS OF Si-SiО2 STRUCTURES
Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, and Xotamjon J. Mansurov

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UPGRADING PHOTO - THERMAL BATTERY FOR INCREASING EFFICIENCY IN USE HOT CLIMATE
Ramizulla A. Muminov, Mukhammad N. Tursunov, Khabibullo X. Sabirov, and Sanjar K. Shokuchkorov

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STABILIZING ACTION OF SODIUM CITRATE WHEN RECEIVING SILVER NANOPARTICLES BY THE METHOD OF CHEMICAL RESTORATION
Komil M. Mukimov, Shamil M. Sharipov, Tal’at S. Asilov, and Asliddin Kh. Bakhriddinov

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CASCODE INJECTION-VOLTAIC TRANSISTOR FIBER/POLYMER COMPOSITE
Ziyoda Kh. Aripova and Shunkorjon T. Toshmatov

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THE METHOD OF SEALING OF TEMPERATURE SENSORS WITH NICKEL NANOCLUSTERS
Saifillo S. Nasriddinov, Shoira P. Usmanova, and Shukhrat A. Ismoilov