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Euroasian Journal of Semiconductors Science and Engineering

 

The journal publishes articles in the following areas:

- Semiconductor physics;

- Semiconductor microelectronics;

- Semiconductor materials science;

- Radiation Physics of Semiconductors

Recent Content

 

CHARGE DISTRIBUTION OF Si IONS EMITTED BY MULTI-ELEMENT LASER PLASMA BEFORE AND AFTER γ-IRRADIATION OF THE TARGET
Toshmukhammad Bolmukhammad ugli Satiboldiev, Zakirjan Toxirovich Аzamatov, Saifillo Saidovich Nasriddinov, and Furkat Makhsutaliyevich Tojinazarov

 

TENSE PROPERTIES OF SILICON WITH NANOCLUSTERS
Sabirbay Awesbay ugli Tursinbaev, Amangeldi Bazarbaevich Kamalov, Halmurat Mijitovich Iliev, and Stanislav Anatolevich Tachilin

 

STUDY OF PHOTOCONDUCTIVITY SPECTRUM OF SULFUR-DOPED SILICON IN FORWARD AND BACKWARD CONNECTION MODES.
Abdulaziz Shavkatovich Mavlyanov, Erkin Berkinbayevich Khaltursunov, Muzaffar Komilovich Azizov, and Khurzoda Kozimjon qizi Mavlonova

 

NEW ASPECTS OF APPLICATION OF ELEMENTS WITH ANOMALOUS PHOTOVOLTIC VOLTAGE
Raziyakhan Abdikhalikovna Nurdinova and Arofatkhan Shavkat qizi Alimjonova

 

SELECTION OF SPECTRAL CHARACTERISTICS OF A PHOTODETECTOR FOR IMPLEMENTATION OF ON-BOARD FIBER OPTICAL NETWORKS
Feruza Abduazizovna Giyasova, Ruslan Gilmullayevich Zakirov, Abdulaziz Shavkatovich Mavlyanov, and Nazokat Izatullaevna Usmonova

 

ABOUT THE PHOTOSENSITIVITY OF MULTI-BARRIER PHOTODIODE STRUCTURE ON THE BASIS OF SEMI-INSULATING GaAs
Oybek Abdullazizovich Abdulkhaev, Anvar A’zamovich Yakubov, Feruza Abdiazizovna Giyasova, and Alim Adilovich Khakimov

 

ANALYSIS OF THE DISTRIBUTION OF ERRORS BASED ON PROBABILISTIC CHARACTERISTICS OF THE PROBE SOLID STATE TEMPERATURE TRANSDUCERS
Anvar Tojiboevich Rakhmonov, Bakhrom Egamberdievich Egamberdiev, Stepan Fedorovich Kuznetsov, and Saifillo Saidovich Nasriddinov

 

NONEQUILIBRIUM PROCESSES ON THE CONTACT SEMICONDUCTOR - GAS DISCHARGE PLASMA
Khojakbar Sultanovich Daliev, Zokirjon Khaydarov, Nosirjon Khaydarovich Yuldashev, and Kurshidjon Tolibovich Yuldashev

 

SILICON SOLAR ELEMENT WITH SMALL P-N JUNCTIONS
Erkin Zunnunovich Imamov, Ramizulla Abdullaevich Muminov, Temur Asfandiyarovich Djalalov, and Xasan Narzullaevich Karimov

 

TO THETHEORY OF ELECTRON STATES IN A SEMICONDUCTOR MULTI-LAYER STRUCTURE
Khojakbar Sultanovich Daliev, Vohob Rustamovich Rasulov, and Bakhodir Akhmedov

 

STUDY OF THE SCHOTTKY POWER DIODES DEGRADATION UNDER 60Co -IRRADIAION
Marat Tagaev, Bakhtiyar Abdikamalov, Viktor Statov, and Saparbay Bekbergenov

 

(GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y STRUCTURAL FEATURES OF SEMICONDUCTOR SOLID SOLUTION
Shakhriyor Yulchiev, Akramjon Boboev, and Johongir Usmonov

 

ENERGY SPECTRUM OF DEFECTS IN SILICON WITH MOLYBDENUM ADMIXTURE
Shakhrukh Daliev, Anifa Paluanova, Kakhramon Fayzullaev, and Srajatdin Kaypnazarov

 

DIMENSIONAL QUANTIZATION IN A SEMICONDUCTOR QUANTUM PIT. DRESSELHOUSE MODEL
Vohob Rasulov, Rustam Rasulov, Ravshan Sultonov, and Ikboljon Eshboltaev

 

STUDY OF THE SCHOTTKY POWER DIODES DEGRADATION UNDER 60Co -IRRADIAION
Marat Tagaev, Bakhtiyar Abdikamalov, Viktor Statov, and Saparbay Bekbergenov

 

(GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y STRUCTURAL FEATURES OF SEMICONDUCTOR SOLID SOLUTION
Shakhriyor Yulchiev, Akramjon Boboev, and Johongir Usmonov

 

ENERGY SPECTRUM OF DEFECTS IN SILICON WITH MOLYBDENUM ADMIXTURE
Shakhrukh Daliev, Anifa Paluanova, Kakhramon Fayzullaev, and Srajatdin Kaypnazarov

 

FEATURES OF TEMPERATURE SENSITIVITY OF SILICON STRUCTURE WITH DEPLETED BASE REGION
Oybek Abdulkhaev, Rahimjon Bebitov, Alim Khakimov, and Axmad Rakhmatov

 

FEATURES OF THE NEW STRUCTURE OF THE BEAM FOR THE LOAD CELL
Abdulaziz Karimov, Alim Khakimov, Damir Istamov, and Abduvakhob Karimov

 

DIMENSIONAL QUANTIZATION IN A SEMICONDUCTOR QUANTUM PIT. DRESSELHOUSE MODEL
Vohob Rasulov, Rustam Rasulov, Ravshan Sultonov, and Ikboljon Eshboltaev

 

UPGRADING PHOTO - THERMAL BATTERY FOR INCREASING EFFICIENCY IN USE HOT CLIMATE
Ramizulla A. Muminov, Mukhammad N. Tursunov, Khabibullo X. Sabirov, and Sanjar K. Shokuchkorov

 

STABILIZING ACTION OF SODIUM CITRATE WHEN RECEIVING SILVER NANOPARTICLES BY THE METHOD OF CHEMICAL RESTORATION
Komil M. Mukimov, Shamil M. Sharipov, Tal’at S. Asilov, and Asliddin Kh. Bakhriddinov

 

ELECTROPHYSICAL PROPERTIES OF MULTILAYERED PHOTO-SENSITIVE STRUCTURES WITH BARRIERS OF METAL-SEMICONDUCTOR
Abdulaziz V. Karimov, Dilbara M. Yodgorova, Feruza A. Giyasova, and Oybek A. Abdulkhaev

 

THE METHOD OF SEALING OF TEMPERATURE SENSORS WITH NICKEL NANOCLUSTERS
Saifillo S. Nasriddinov, Shoira P. Usmanova, and Shukhrat A. Ismoilov

 

INFLUENCE OF RHODIUM AND IRIDIUM IMPURITY ATOMS ON THE CAPACITIVE CHARACTERISTICS OF Si-SiО2 STRUCTURES
Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, and Xotamjon J. Mansurov

 

LASER TESTING OF SILICON WAFERS
Zakirjan T. Azamatov, Ilya A. Kulagin, Kakhkhor P. Abdurakhmanov, and Nigora A. N.A. Akbarova

 

CAPACITIVE SPECTROSCOPY OF DEFECTS IN SEMICONDUCTORS, DOPED BY ATOMS OF GADOLINIUM
Shoakhriyor B. Norkulov, Khodjakbar S. Daliev, Makhmud Sh. Dehkanov, and Uktam K. Erugliev

 

FEATURES THE GENERALITIES OF I-V CURVE FORMATION IN MOSFET WITH A COMMON DRAIN
Khayrulla K. Aripov, Akhmed M. Abdullayev, and Shunkurjon T. Toshmatov

 

STUDY OF THE MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF FILMS OF SOLID SOLUTION ZnXSn1-хSe OBTAINED BY THE METHOD OF CMBD
Kudrat M. Kuchkarov, Takhir M. Razykov, Bobur A. Ergashev, and Rukhiddin T. Yuldoshov

 

INFRARED SPECTROSCOPY OF SILICON DOPED BY STANNUM AND MANGANESE
Sharifa B. Utamuradova, Ravshanbek M. Ergashev, and Khusniddin J. Matchanov

 

STRUCTURAL FEATURES OF THE SOLID SOLUTION (GaAs)1-x-y(Ge2)x(ZnSe)y WITH QUANTUM DOTS (0≤x≤0,17; 0≤y≤0,14)
Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, and Hkushruy A. Makhmudov

 

INFLUENCE OF HEAT TREATMENT ON THE BEHAVIOR OF DEEP LEVELS IN SILICON DOPED BY TUNGSTEN
Shokhrukh Kh. Daliev, Abdugofur T. Mamadalimov, Sayfullo S. Nasriddinov, and Anifa D. Paluanova

 

SERIAL AND SHUNTABLE RESISTANCE OF CIGS SOLAR PHOTO-ELECTRIC MODULE IN THE CONDITIONS OF REAL SOLAR LIGHTING AT VARIOUS TEMPERATURES
Rustam R. Kobulov, Nuriddin A. Matchanov, Omonboy K. Ataboev, and Farrukh A. Akbarov

 

ORGANIC PHOTODIODES ON THE BASIS OF COTTON FIBER/POLYMER COMPOSITE
Jonibek J. Hamdamov, Anvar S. Zakirov, and Abdugafur T. Mamadalimov

 

THE PHOTOLUMINESCENCE SPECTRA OF POWDERS OF ZINC OXIDE WITH LASER EXCITATION
Ilyos A. Rakhmatullaev, Vladimir S. Gorelik, and Abdulla K. Kurbonov

 

OPTICAL POWER METER FOR DIAGNOSTICS OF FIBER-OPTIC COMMUNICATION LINES AND DIGITAL MULTIMETER
Feruza A. Giyasova, B. Sh. Yuldashev, Ruslan G. Zakirov, and Gulkhayo T. Murodillaeva

 

THE PRINCIPLES OF INCREASING THE SENSITIVITY OF TRANSISTOR STRUCTURES TO EXTERNAL INFLUENCES
Davron R. Djuraev, Abdulaziz V. Karimov, Dilbara M. Yodgorova, and Akmal A. Turaev

 

VOLT-AMPERE CHARACTERISTICS OF MOS STRUCTURES Al-Al2O3-p-CdTe-Mo – IN THE FORWARD DIRECTION OF CURRENT
Abatbay K. Uteniyazov, Kanatbay A. Ismailov, and Fatima T. Srajatdinova

 

UPGRADING PHOTO - THERMAL BATTERY FOR INCREASING EFFICIENCY IN USE HOT CLIMATE
Ramizulla A. Muminov, Mukhammad N. Tursunov, Khabibullo X. Sabirov, and Sanjar K. Shokuchkorov

 

STABILIZING ACTION OF SODIUM CITRATE WHEN RECEIVING SILVER NANOPARTICLES BY THE METHOD OF CHEMICAL RESTORATION
Komil M. Mukimov, Shamil M. Sharipov, Tal’at S. Asilov, and Asliddin Kh. Bakhriddinov

 

CASCODE INJECTION-VOLTAIC TRANSISTOR FIBER/POLYMER COMPOSITE
Ziyoda Kh. Aripova and Shunkorjon T. Toshmatov

 

ELECTROPHYSICAL PROPERTIES OF MULTILAYERED PHOTO-SENSITIVE STRUCTURES WITH BARRIERS OF METAL-SEMICONDUCTOR
Abdulaziz V. Karimov, Dilbara M. Yodgorova, Feruza A. Giyasova, and Oybek A. Abdulkhaev

 

THE METHOD OF SEALING OF TEMPERATURE SENSORS WITH NICKEL NANOCLUSTERS
Saifillo S. Nasriddinov, Shoira P. Usmanova, and Shukhrat A. Ismoilov