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Scientific Bulletin of Namangan State University

Abstract

In this work, the influence of the microwave field on the Fermi quasi level in different semiconductors for different carrier concentration is analyzed. It is shown that a change in the Fermi quasi level strongly affects the current –voltage characteristic of semiconductor diodes.

First Page

8

Last Page

15

References

1. S.X. Shamirzaev, G. Gulyamov , M.G. Dadamirzaev , A.G. Gulyamov Sverxvsokochastotny kvazipotentsial i vixreve toki v p−n-perexode/ Fizika i texnika poluprovodnikov, 2011, tom 45, vp. 8 2. G. Gulyamov , U.I. Erkaboev , N.Yu. Sharibaev , A.G. Gulyamov EDS, voznikayushaya v p−n- perexode pri vozdeystvii silnogo SVCh polya i sveta/ Fizika i texnika poluprovodnikov, 2019, tom 53, vp. 3 3. Helmut Spieler “Introduction to radiation detectors and Electronis”, 30 – mar – 99. IX.2.a. A semiconductor device primer – doping and diodes. 4. S. Zi “Fizika poluprovodnikovvx priborov” tom – 1. Str (91 – 100). 5. V.L.Bonch-Bruevich, S.G.Kalashnikov «Fizika poluprovodnikov», Nauka, M.1977. 6. S.X. Shamirzaev, G. Gulyamov , M.G. Dadamirzaev , A.G. Gulyamov Vixreve toki, voznikayushie na p−n-perexode v sverxvsokochastotnom elektromagnitnom pole/ Fizika i texnika poluprovodnikov, 2009, tom 43, vp. 9 7. Ablazimov N.A., Veynger A.S.it. Pitanov V.S. Vliyanie silnogo SVCh polya na fotoelektricheskie xarakteristiki kremnievx p – n – perexodov /fizika i texnika poluprovodnikov, 1992, tom 26, vp.6

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