Scientific Bulletin of Namangan State University


In this article it was investigated that the effects of deformation and light p-n junctions on I-V characteristic. It is shown that the p-n switching between light and deformation has the potential to control the I-V characteristic. The deformation changes the band gap of the semiconductor, this contributes to a change in the absorption coefficient, and under the influence of deformation, the reverse branch of the pn junction drops lower with increasing strain

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