Scientific Bulletin of Namangan State University
Abstract
In this article it was investigated that the effects of deformation and light p-n junctions on I-V characteristic. It is shown that the p-n switching between light and deformation has the potential to control the I-V characteristic. The deformation changes the band gap of the semiconductor, this contributes to a change in the absorption coefficient, and under the influence of deformation, the reverse branch of the pn junction drops lower with increasing strain
First Page
3
Last Page
10
References
1. Bonsh-Bruevish V.L.Kalashnikov S.G. Fizika poluprovodnikov (M., Nauka, 1977) 2. K. Shopra, S. Das. Tonkoplenoshne solneshne element. M.: Mir, 1986.- 435 s.. 3. P.S.Kireev. Fizika poluprovodnikov. M. ‚Vsshaya shkola‛1975 g. 4. Polyakova A.L. Deformachiya poluprovodnikov i poluprovodnikovx priborov (M., Energiya, 1978) 5. G. Gulyamov, A.G. Gulyamov. On the Tensosensitivity of a p–n Junction under Illumination. Semiconductors, 2015, Vol. 49, No. 6, pp. 819–822. 6. G.Gulyamov, A.G.Gulyamov. Vliyanie deformachii na reaktivne fototoki v poluprovodnikax. «Alternativnaya energetika i ekologiya».– Rossiya, g.Sarov, 2014.-№13. C. 17–21. 7. Jacques I. Pankove, Optical processes in semiconductors (Prentice-Hall, Inc. Englewood Cliffs, New Jersey, 1971). 8. P.I. Baranskiy, V.P. Kloshkov, I.V. Potkevish. Poluprovodnikovaya elektronika – Spravoshnik. (Naukova dumka, Kiev, 1975).
Erratum
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Recommended Citation
Gulyamov, Abdurasul Gafurovich and Usmanov, Mukhammadjon Abduxalil ugli
(2021)
"EFFECT OF DEFORMATION ON PHOTOCURRENCES IN P-N TRANSITIONS,"
Scientific Bulletin of Namangan State University: Vol. 2
:
Iss.
2
, Article 1.
Available at:
https://uzjournals.edu.uz/namdu/vol2/iss2/1