•  
  •  
 

Scientific Bulletin of Namangan State University

Abstract

In this article it was investigated that the effects of deformation and light p-n junctions on I-V characteristic. It is shown that the p-n switching between light and deformation has the potential to control the I-V characteristic. The deformation changes the band gap of the semiconductor, this contributes to a change in the absorption coefficient, and under the influence of deformation, the reverse branch of the pn junction drops lower with increasing strain

First Page

3

Last Page

10

References

1. Bonsh-Bruevish V.L.Kalashnikov S.G. Fizika poluprovodnikov (M., Nauka, 1977) 2. K. Shopra, S. Das. Tonkoplenoshne solneshne element. M.: Mir, 1986.- 435 s.. 3. P.S.Kireev. Fizika poluprovodnikov. M. ‚Vsshaya shkola‛1975 g. 4. Polyakova A.L. Deformachiya poluprovodnikov i poluprovodnikovx priborov (M., Energiya, 1978) 5. G. Gulyamov, A.G. Gulyamov. On the Tensosensitivity of a p–n Junction under Illumination. Semiconductors, 2015, Vol. 49, No. 6, pp. 819–822. 6. G.Gulyamov, A.G.Gulyamov. Vliyanie deformachii na reaktivne fototoki v poluprovodnikax. «Alternativnaya energetika i ekologiya».– Rossiya, g.Sarov, 2014.-№13. C. 17–21. 7. Jacques I. Pankove, Optical processes in semiconductors (Prentice-Hall, Inc. Englewood Cliffs, New Jersey, 1971). 8. P.I. Baranskiy, V.P. Kloshkov, I.V. Potkevish. Poluprovodnikovaya elektronika – Spravoshnik. (Naukova dumka, Kiev, 1975).

Erratum

???????

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.