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Scientific Bulletin of Namangan State University

Abstract

The dependence of the lifetime of charge carriers ()in monocrystalline silicon on the concentration of light copper and post-diffusion cooling is discussed. The results obtained are explained by the redistribution of non-basic carriers at the adhesion level. In the compensated p- Si and the control p-Si, the relaxation process occurs in different wasy   98s for p- Si, and   5s for p-Si.At the same time ,with the growth of te initial concentration of charge carriers (in this case boron-B ) in the compensated silicon, an increase (with equal values ) is observed, which is due to a different degree of micro –uniformity in conductivity in the studied samples.

First Page

40

Last Page

46

References

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