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Scientific Bulletin of Namangan State University

Abstract

In this article presents the results of the study of the mechanisms of the current passage of the pSi-nSi1-xSnx (0х0.04)-structure, which is explained in the framework of the «model of the formation of defects and defect-impurity complexes».

First Page

31

Last Page

36

References

1. C.Z.Zaynabidinov, R.Aliev, M.Muydinova, B.Urmanov. Ob opticheskoy effektivnosti kremnievix fotoelektricheskix preobrazovateley solnechnoy energii. Geliotexnika. 2018. №5, - S. 3. 2. A.S.Saidov, SH.N.Usmonov, M.U.Kalanov, X.M.Madaminov. Strukturnoe i fotoelektricheskoe issledovanie epitaksialnogo sloya Si1-xSnx. Pisma v jurnal texnicheskoy fiziki. 2010, T. 36, № 9. s. 107. 3. A.Yu.Leiderman, V.G.Stel’makh, M.Sadykov. Recombination in Semiconductors with Deep Impurities. Applied Solar Energy, 2008, Vol. 44, No. 4, pp. 276–280. 4. A.S.Saidov, C.Z.Zaynabidinov, SH.N.Usmonov, X.M.Madaminov. Osobennosti voltampernix xarakteristik pSi-nSi1-xSnx (0  x  0.04) struktur. Vestnik GulGU, 2011, №3, str.5. 5. A.YU.Leyderman. Noviy mexanizm nasisheniya tokov korotkogo zamikaniya v fotolementax pri konsentrirovannom solnechnom izluchenii. Geliotexnika. 2003. №3, - S. 16. 6. SH.N.Usmonov, A.S.Saidov, M.S.Saidov, A.YU.Leyderman, K.A.Amanov. Anomalnaya temperaturnaya zavisimost voltampernix xarakteristik pSi-n(Si2)1-x(ZnSe)x struktur. Geliotexnika. 2009. №3, - S. 26. 7. Kh.M.Madaminov. The Effect of Recombination through Vacancies on the Type of Current-Voltage Characteristics of pSi-nSi1-xSnx – Structures. Journal of Science and Engineering Research. № 11 (5), 2018, pp. 97-101.

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