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Scientific Bulletin of Namangan State University

Abstract

It is shown that in the spectrum of the main Gaussian line and there is the extreme long-wave region with the photon energy of 1.1 eV and three components corresponding to the connection As-Ge, Gt-Ge and Ga-Ge. It is determined that nanostructures on the surface of the epitaxial layer (GaAs)1-х(Ge2)x are caused by impurity Ge atoms.

First Page

58

Last Page

63

References

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