Home > NAMDU > Vol. 1 (2019) > Iss. 8
Scientific Bulletin of Namangan State University
Abstract
in the paper investigated the change in electrophysical properties of silicon compensated by radiation defects when re-irradiated by gamma-quantum, and proposed a model of radiation magnification of the potential barrier between small and high conductivity fields.
First Page
35
Last Page
39
References
1. Karimov, M., Makhkamov, S.,Tursunov, N.A.,Makhmudov,S.A.,Sulaimonov,A.A. The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon. // Russian Physics Journal. 2011,-V.54, -Issue 5,-P.589-593. 2. Yang,J,Li,X.,Liu,C.,Fleetwood,D.M.The effect of ionization and displacement damage on minority carrier lifetime // Microelectronics Reliability.2018,-V.82,-P.124-129. 3. Ermolov P.,Karmanov D.,Leflat A.,Manankov V.,Merkin M.,SHabalina E. Neytronno- navedennie effekti v zonnom kremnii, obuslovlennie divakansionnimi klasterami s tetravakansionnim yadrom // FTP. -Sankt-Peterburg, 2002, -T.36,-№ 10, -S.1194-1201. 4. Makhkamov Sh.,Karimov M.,Khakimov Z.M.,Odilova N.Dj.,Makhmudov Sh.A., Kurbanov A.O.,and Begmatov K.A. Interaction of deep impurities with radiation defects in n-Si at -irradiation // Radiation effects. and defects in solids.–Berlin, 2005. -V.160. -№8. - R.349-356. 5. Karimov M.Radiatsionno-fizicheskie protsessi v kompensirovannom kremnii. Avtoref.dis.dok.-fiz.-mat. nauk. -Tashkent, 2001.- 31 s.
Erratum
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Recommended Citation
Kurbanov, Azizjon Obitjonovich
(2019)
"RADIATION-PHYSICAL PROCESSES IN HETEROGENEOUS
MONOCRYSTALLINE SILICON,"
Scientific Bulletin of Namangan State University: Vol. 1
:
Iss.
8
, Article 6.
Available at:
https://uzjournals.edu.uz/namdu/vol1/iss8/6