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Scientific Bulletin of Namangan State University

Abstract

in the paper investigated the change in electrophysical properties of silicon compensated by radiation defects when re-irradiated by gamma-quantum, and proposed a model of radiation magnification of the potential barrier between small and high conductivity fields.

First Page

35

Last Page

39

References

1. Karimov, M., Makhkamov, S.,Tursunov, N.A.,Makhmudov,S.A.,Sulaimonov,A.A. The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon. // Russian Physics Journal. 2011,-V.54, -Issue 5,-P.589-593. 2. Yang,J,Li,X.,Liu,C.,Fleetwood,D.M.The effect of ionization and displacement damage on minority carrier lifetime // Microelectronics Reliability.2018,-V.82,-P.124-129. 3. Ermolov P.,Karmanov D.,Leflat A.,Manankov V.,Merkin M.,SHabalina E. Neytronno- navedennie effekti v zonnom kremnii, obuslovlennie divakansionnimi klasterami s tetravakansionnim yadrom // FTP. -Sankt-Peterburg, 2002, -T.36,-№ 10, -S.1194-1201. 4. Makhkamov Sh.,Karimov M.,Khakimov Z.M.,Odilova N.Dj.,Makhmudov Sh.A., Kurbanov A.O.,and Begmatov K.A. Interaction of deep impurities with radiation defects in n-Si at -irradiation // Radiation effects. and defects in solids.–Berlin, 2005. -V.160. -№8. - R.349-356. 5. Karimov M.Radiatsionno-fizicheskie protsessi v kompensirovannom kremnii. Avtoref.dis.dok.-fiz.-mat. nauk. -Tashkent, 2001.- 31 s.

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