Scientific Bulletin of Namangan State University


in the paper investigated the change in electrophysical properties of silicon compensated by radiation defects when re-irradiated by gamma-quantum, and proposed a model of radiation magnification of the potential barrier between small and high conductivity fields.

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1. Karimov, M., Makhkamov, S.,Tursunov, N.A.,Makhmudov,S.A.,Sulaimonov,A.A. The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon. // Russian Physics Journal. 2011,-V.54, -Issue 5,-P.589-593. 2. Yang,J,Li,X.,Liu,C.,Fleetwood,D.M.The effect of ionization and displacement damage on minority carrier lifetime // Microelectronics Reliability.2018,-V.82,-P.124-129. 3. Ermolov P.,Karmanov D.,Leflat A.,Manankov V.,Merkin M.,SHabalina E. Neytronno- navedennie effekti v zonnom kremnii, obuslovlennie divakansionnimi klasterami s tetravakansionnim yadrom // FTP. -Sankt-Peterburg, 2002, -T.36,-№ 10, -S.1194-1201. 4. Makhkamov Sh.,Karimov M.,Khakimov Z.M.,Odilova N.Dj.,Makhmudov Sh.A., Kurbanov A.O.,and Begmatov K.A. Interaction of deep impurities with radiation defects in n-Si at -irradiation // Radiation effects. and defects in solids.–Berlin, 2005. -V.160. -№8. - R.349-356. 5. Karimov M.Radiatsionno-fizicheskie protsessi v kompensirovannom kremnii. Avtoref.dis.dok.-fiz.-mat. nauk. -Tashkent, 2001.- 31 s.





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