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Scientific Bulletin of Namangan State University

Abstract

Abstract.In this manuscript, the temperature dependence of the lasing characteristics of the interface semiconductor-insulator was theoretically investigated. Provided that, during the formation of the inversion-layer charges of the main contribution of volumetric and surface generation.

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References

1. Berman L.S.Lebedev A.A.Emkostnaya spektroskopiya glubokix sentrov v poluprovodnikax.Leningrad.Nauka.1981.184 s. 2. Zerbst M.Ralaxation effects on holbeiter isolator- grenzflochen.Zangew.Phys.1962. № 30.P.22-29. 3. Abduraxmanov K.P.Berman L.S. Vlasov S.I.Kotov B.A.Issledovanie ostatochnix glubokix sentrov v strukturax metall-dielektrik-poluprovodnik yomkostnim metodom.FTP.1979 g.T.13.Vip.7.str.1447-1450. 4. Parchinskiy P.B.,Vlasov S.I.Generatsionnie xarakteristiki granitsi razdela kremniy-svinsovo-borosilikatnoe steklo. Mikroelektronika.2001.t.30.№ 6. str.466- 471. 5. Kang J.S.Schroder D.K. The Pulsed MIS Capacitor.Phys.Stat.Sol.(a) 1985.89,13 ,P.13-43. 6. Vlasov S.I.,Ovsyannikov A.V.Skorost poverxnostnoy generatsii nositeley zaryada po granitse razdela poluprovodnik - steklo. Elektronnaya obrabotka materialov.2008 g.№ 1 (249) str.91-94. 7. Chistov Yu.S., Sinorov V.F. Fizika MOP-struktur.Voronej.VGU.1989.222 s. 8. Vlasov S.I., Parchinskij P.B., Ligaij L.G. Temperature Dependence of Carrier Generation at the Silicon-Lead-Borosi- licate-Glass Interface. Microelectronics. 2003. v. 32,№ 2, p. 95-98.

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