Scientific Bulletin of Namangan State University


In this manuscript,it was investigated that the mechanism of recombinational processes in the film of a-Si: H in terms of the dependence of Stationary photoconductivity on temperature(The method of the dependence of Steady-State Photoconductivity on temperature). It was explained that rebombination processes is differently related to D-centers by division temperature into two intervals for the strongly absorbed a -Si:H is evident from the graph of σ ~ σ0(1/T)

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