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Scientific Bulletin of Namangan State University

Abstract

In this manuscript,it was investigated that the mechanism of recombinational processes in the film of a-Si: H in terms of the dependence of Stationary photoconductivity on temperature(The method of the dependence of Steady-State Photoconductivity on temperature). It was explained that rebombination processes is differently related to D-centers by division temperature into two intervals for the strongly absorbed a -Si:H is evident from the graph of σ ~ σ0(1/T)

First Page

27

Last Page

32

References

1. O.A.Golikova, M.M. Kazanin, A.N. Kuznetsov, E.V. Bogdanova, FTP (2000), t. 34, v. 9, s. 66-70. 2. S.V. Kuznetsov, FTP, (2000), V. 6. S. 748-752. 3. I.A. Kurova, Nalgieva M.A, Ormont N. N., Vestnik MGU, seriya 3, Fizika, Astronomiya, (2005), №4, s. 54-57. 4. O.A. Golikova, Domashevskaya E.P., Kudoyarova V.X., Mezdrogina M.M., Sorokina K.L., Terekov V.A., Trostyanskiy S.V., FTP, (1989), t. 23. V. 3. S. 450-455. 5. O.A. Golikova, U. S. Boboxodjaev, Dubro V.V., Ikramov R.G., M.M. Kazanin, Mezdrogina M.M., Yafaev R.R., FTP (1992), t. 26. V. 1. S. 66-70. 6. Balogurov L.A., Kyutte Y.Y., FTP, (1985), t. 19. V. 6. S. 1046-1049.

Erratum

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