Scientific Bulletin of Namangan State University
Abstract
The spectra of the band gap in heavily doped semiconductors are studied. A model is proposed for describing the band gap of a semiconductor depending on the degree of doping and on temperature. With the help of the model, changes in the width of the forbidden zone are investigated
First Page
29
Last Page
35
References
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Erratum
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Recommended Citation
Dadamirzaev, Muzaffar Gulomkodikodirovich; Sharibaev, Nosir Yusupzhanovich; and Turgunov, Muslim
(2019)
"CHANGES OF THE WIDTH OF THE BAND GAP OF STRONGLY
ALLOYEDSEMICONDUCTOR,"
Scientific Bulletin of Namangan State University: Vol. 1
:
Iss.
3
, Article 5.
Available at:
https://uzjournals.edu.uz/namdu/vol1/iss3/5