Home > NAMDU > Vol. 1 (2019) > Iss. 3
Scientific Bulletin of Namangan State University
Abstract
The spectra of the band gap in heavily doped semiconductors are studied. A model is proposed for describing the band gap of a semiconductor depending on the degree of doping and on temperature. With the help of the model, changes in the width of the forbidden zone are investigated
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References
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Erratum
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Recommended Citation
Dadamirzaev, Muzaffar Gulomkodikodirovich; Sharibaev, Nosir Yusupzhanovich; and Turgunov, Muslim
(2019)
"CHANGES OF THE WIDTH OF THE BAND GAP OF STRONGLY
ALLOYEDSEMICONDUCTOR,"
Scientific Bulletin of Namangan State University: Vol. 1
:
Iss.
3
, Article 5.
Available at:
https://uzjournals.edu.uz/namdu/vol1/iss3/5