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Scientific Bulletin of Namangan State University

Abstract

It is shown that the change in the non-ideality coefficient of the voltage-current characteristic of the p– n junction is more sensitive when light and a powerful microwave field act simultaneously. It has been established that, under the action of the microwave field and light, recombination and lasing processes arise on the p – n junction, which strongly influence on the nonideality coefficient.

First Page

41

Last Page

49

References

1. SHokli V. Teoriya elektrichekix poluprovodnikov. Per. s angl. Pod red. V. P.Juze. M., izd-vo inostr. lit., 1953.-186s. 2. Sah. C.T., Noyce. R.H., Shockly W. Carrier Generation and Recombination in p-n- Junctions and p-n-Junctions Characteristics// Proceedings of the IRE, 1957. -vol.45, №9. - pp.1228-1243. 3. Ashmontas S.P., Olekas A.P., SHirmulis E.I. Vliyanie razogreva nositeley zaryada na vid VAX p-n-perexoda germaniya// Fizika i texnika poluprovodnikov.– Sankt Peterburg, 1985.- t.29. №5. -S. 807-809. 4. Ablyazimova N.A.,Veynger A.I., Pitanov V.Elektricheskie svoystva kremnievix r-n- perexodov v silnix SVCH polyax// Fizika i texnika poluprovodnikov. – Leningrad, 1988.- t.22. № 11. – S. 2001-2007. 5. Usanov D.A., Skripal A.V., Kletsov A.A., Abramov A.V., Ilin S.N. Otritsatelnoe differensialnoe soprotivlenie N-tipa lavinno-proletnix diodov v silnom SVCH-pole// Izvestiya vuzov. Elektronika. Rossiya, 2003. №4. str.5–12. 6. N.A.Ablyazimova, A.I.Veynger, V.S.Pitanov. Vliyanie silnogo SVCH polya na fotoelektricheskie xarakteristiki kremnievix p-n-perexodov// // Fizika i texnika poluprovodnikov.– Sankt Peterburg, 1992.- t.26. № 6. -S.1041-1047. 7 Gulyamov G., Dadamirzaev M.G. Heating of the Electrons and the Rectified Current at the Contacts That Are in an Alternating Electromagnetic Field // World Journal of Condensed Matter Physics–USA, 2015, - Vol. 5, No.1, rr. 48-53. 8 Shamirzaev S.H., Gulyamov G., Dadamirzaev M.G., Gulyamov A.G. The Nonideality Coefficient of Current–Voltage Characteristics for p–n Junctions in a High Ultrahigh- Frequenc (Microwave) Field// Semiconductors. –USA, 2009. -vol. 43. №1. -pp. 47–51. 9 Pikus G.E. Osnovi teorii poluprovodnikovix priborov. -Moskva: Nauka, 1965. - 448s.

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