•  
  •  
 

Karakalpak Scientific Journal

Abstract

The processes of excitation of photoconductivity in structures with heteroinclusions with a band gap greater than the band gap of the base material of the matrix have been studied. Structures are studied when such macroinclusions are located periodically and are located at distances equal to the size of the inclusions. A technique has been developed and analytical expressions have been derived for calculating the photocurrent and specific photoconductivity in such structures.

First Page

36

Last Page

45

References

  1. Saidov A.S., Usmonov Sh.N., Аmonov К.А., Saidov М.S., Кutlimuratov B.R. Photosensitivity of pSi-n(Si2)1–xy(Ge2)x(ZnSe)y Heterostructures with Quantum Dots. Applied Solar Energy. 2017. No.3. P.287-290. https://doi:10.3103/S0003701X17040132
  2. Blokhin S.A., Sakharov A.V., Nadtochy А.М., et. al. AlGaAs/GaAs Photovoltaic Cells with an Array of InGaAs QDs. Semiconductors. 2009. 43. No. 4. P. 514–518. https://doi:10.1134/S1063782609040204
  3. Fujii H., Toprasertpong K., Wang Y., Watanabe K., Sugiyama M., and Nakano Y. 100-period, 1.23-eV Bandgap InGaAs/GaAsP Quantum Wells for High-Efficiency GaAs Solar Cells: Toward Current-Matched Ge-Based Tandem Cells. Prog. Photovoltaics: Res. Appl. 2014. 22. No.7. P.784-795. https://doi.org/10.1002/pip.2454.
  4. Mintairov S. A.. Kalyuzhnyy N. A., Maxsimov M.V.. et. al1. GaAs quantum well-dots solar cells with spectral response extended to 1100 nm. Electron. Lett. 2015. No.20. P.1602-1604. https://doi.org/10.1049/el.2015.2481.
  5. Moiseev K.D., Parkhomenko Ya.A., Gushchina E.V. et. al1. Peculiarity of the epitaxial growth of narrow-gap InSb quantum dots on InAs substrate. Semiconductors. 2009. 43. №8 С. 1102-1109. https://doi: 10.1134/S1063782609080259
  6. Parkhomenko Ya. A., Dement’ev P. A. and Moiseev K. D. Quantum Dots Grown in the InSb/GaSb System by Liquid-Phase. Semiconductors. 2016. 50. №7 C.976 -979. https://doi:10.1134/S1063782616070198
  7. Tasco V., Deguffroy N., Baranov A.N., e t. al. High-density InSb-based quantum dots emitting in the mid - infrared. J. Cryst. Growth. 2007. №301(1). P.713-717. https://doi.org/10.1016/j.jcrysgro.2006.09.016.
  8. Mock P., Booker G.R, Mason N.J. et. al. MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL Mater. Sci. Eng. B 2001. 80(1) . P.112-115. https://doi.org/10.1016/S0921-5107(00)00625-5.
  9. Uteniyazov A.K., Leyderman A.Yu., R.A. Ayukhanov E.S. Esenbaeva, Gafurova M.V. Features of Current Transport in Al-Al2O3-pCdTe-Mo-Structure. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020. 23. No.4. P.95-101. https://doi.org/10.15407/spqeo23.04.95
  10. Smith R.A. Semiconductors. М.: Мir. 1982. 560p. doi.org/10.15407/spqeo23.04.95

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.