Karakalpak Scientific Journal


The possibility of realizing the effect of injection depletion in a + -structure made on the basis of a semiconductor with paired donor-acceptor complexes is considered. It is shown that the appearance of this effect is possible under conditions of almost complete compensation of the shallow dopant donor impurity by the charge of the acceptor component of the pair complex. A necessary condition is also a strong asymmetry of the coefficients of capture of holes at the acceptor level in comparison with the coefficient of capture of electrons at the donor level.

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