Karakalpak Scientific Journal


The phenomenon of nonlinear photoelasticity, which consists of the occurrence of nonlinear photoelasticity coefficients comparable in magnitude to linear ones near the electronic resonance between the deep impurity levels and the bottom of the conduction zone, is considered theoretically. Analytical expressions for the Fourier decomposition coefficients of the dielectric permittivity of the crystal in the phase of the sound wave, which are proportional to the photoelasticity coefficients, are obtained. A general criterion for the nonlinear photoelasticity effect in the investigated frequency region is found numerically. It is shown that high deformation potentials of deep levels stimulate the appearance of this effect at much lower sound wave powers than near inter-impurity resonances or zone-zone resonances.

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