The results of studies of photoelectric injection enhancement of the Al–Al2O3–p-CdTe –Mo structure upon application of low bias voltages. It has been shown that the studied Al-Al2O3–p-CdTe-Mo structure under can be represented as a n+-p-Rом structure with a long base. Conducted researches show that Al-Al2O3–p-CdTe-Mo structure has unique properties. It has very high photocurrent and photosensitivity at both direct and reverse dias voltage under even small bias voltage (up to 500mV).
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Uteniyazov, A K.
"Photoelectric injection amplification of Al–Al2O3–p-CdTe–Mo structures at low bias voltages,"
Karakalpak Scientific Journal: Vol. 3
, Article 5.
Available at: https://uzjournals.edu.uz/karsu/vol3/iss2/5