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Karakalpak Scientific Journal

Abstract

The current instabilities in silicon with nanoclusters of manganese atoms in accordance with the excitation conditions and the control possibilities for the oscillation parameters discovered by us differ substantially from the current instability found in many other semiconductor materials [1-3]. This is due to the onset of generation of current instability only under illumination by certain wavelengths under the condition of a sufficiently low IR light intensity, as well as a pronounced dependence of the current frequency frequency on the energy of the incident photons. It should be noted that such instabilities of current are observed only in silicon samples with nanoclusters of manganese atoms, and in the samples with analogous electrophysical parameters, manganese-doped without the formation of clusters, the effect is absent.

First Page

63

Last Page

71

References

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