Karakalpak Scientific Journal
Abstract
The diffusion method was used to obtain new silicon-based photocell structures with deep p–n junctions. It is shown that the presence of nickel clusters in the structure leads to an increase in the parameters of the solar cell. The spectral sensitivity region and the spectral dependence of the absorption coefficient are investigated. It was shown that additional doping of silicon p-n structures with nickel allows the creation of solar cells with greater efficiency in the IR spectral region. Improving the sensitivity in the infrared, we associate due to the influence of electrically neutral nickel clusters or nickel and phosphorus compounds.
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References
1. L.S. Lunin, M.L. Lunina, A.S. Pashenko, D.L. Alfimova, D.A. Arustamyan, A.E. Kazakova. Kaskadnye solnechnye elementy na osnove nanogeterostruktur GaP/Si/Ge [Cascade solar cells based on GaP/Si/Ge nanoheterostructures], Pisma v Zhurnal tehnicheskoj fiziki [Technical Physics Letters], 2019, vol. 45, no. 6, pp. 7-9. (in Russian.). 2. M.K. Bakhadyrhanov, U.X. Sodikov, D. Melibayev, Tuerdi Wumaier, S.V. Koveshnikov, K.A. Khodjanepesov, Jiangxiang Zhan. Silicon withClusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic, Journal of Materials Science and Chemical Engineering, 2018, vol. 6, pp. 180-190, DOI: 10.4236/msce.2018.64017. 3. M.K. Bahadyrhanov, S.B. Isamov, H.M. Iliev, S.A. Tachilin, K.U. Kamalov. Fotoelementy s rasshirennoj spektralnoj chuvstvitelnostyu na osnove kremniya s nanovarizonnymi strukturami [Photo cells with the expanded spectral response on the basis of silicon with nanovariband structures nanosize various band], Geliotehnika [Applied Solar Energy], 2014, no. 2, pp. 3-5. (in Russian). 4. M.K. Bakhadyrkhanova, S.B. Isamov, Z.T. Kenzhaev, S.V. Koveshnikov. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction, Technical Physics Letters, 2019, vol. 45, no. 10, pp. 959–962. DOI: 10.1134/S1063785019100031. 5. J. Lindroos, D.P. Fenning, D.J. Backlund, E. Verlage, A. Gorgulla, S.K. Estreicher. H. Savin, T. Buonassisi, Nickel: A very fast diffuser in silicon, Journal of applied physics, 2013, V. 113, p. 7. 0021-8979, DOI: 10.1063/1.4807799. 6. N. N. Lathiotakis, A. N. Andriotis, M. Menon, J. Connolly. Tight binding molecular dynamics study of Ni clusters, J. Chem. Phys., 1996, V. 104, No. 3, pp. 992-1003. 7. B.A. Abdurakhmanov, M.K. Bakhadirkhanov, K.S. Ayupov, H.M. Iliyev, E.B. Saitov, A. Mavlyanov, H.U. Kamalov. Formation of Clusters of Impurity Atoms of Nickel in Silicon and Controlling Their Parameters, Nanoscience and Nanotechnology, 2014, V. 4, no. 2, pp. 23-26, DOI: 10.5923/j.nn.20140402.01. 8. M.K. Bakhadyrkhanov, K.A. Ismailov, B.K. Ismaylov, Z.M. Saparniyazova, “Clusters of nickel atoms and controlling their state in silicon lattice”, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 2018, V. 21, no. 4, pp. 300-304, doi: https:/doi.org/10.15407/spqeo21.04.XXX. 9. C.W. Hsu, W.Y. Wang, K.T. Wang, H.A. Chen and T.C. Wei. Manipulating the adhesion of electroless nickel-phosphorus film on silicon wafers by silane compound modification and rapid thermal annealing, Scientific Reports, Aug. 2017, 7: 9656. DOI:10.1038/s41598-017-08639-x. 10. K.C. Lai, P.Y. Wu, C.M. Chen, T.C. Wei, C.H. Wu, and S.P. Feng, Interfacial Characterizations of a Nickel-Phosphorus Layer Electrolessly Deposited on a Silane Compound-Modified Silicon Wafer Under Thermal Annealing, Journal of Electronic materials, 2016, V. 45, No. 10, pp. 4813-4825. DOI: 10.1007/s11664-016-4708-x.
Recommended Citation
Ismayilov, K. A.; Kenzhaev, Z. T.; Isamov, S. B.; and Koveshnikov, S. V.
(2020)
"THE EFFECT OF NICKEL ALLOYING ON THE INFRARED SENSITIVITY OF SILICON SOLAR CELLS,"
Karakalpak Scientific Journal: Vol. 3
:
Iss.
1
, Article 6.
Available at:
https://uzjournals.edu.uz/karsu/vol3/iss1/6