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Karakalpak Scientific Journal

Abstract

The diffusion method was used to obtain new silicon-based photocell structures with deep p–n junctions. It is shown that the presence of nickel clusters in the structure leads to an increase in the parameters of the solar cell. The spectral sensitivity region and the spectral dependence of the absorption coefficient are investigated. It was shown that additional doping of silicon p-n structures with nickel allows the creation of solar cells with greater efficiency in the IR spectral region. Improving the sensitivity in the infrared, we associate due to the influence of electrically neutral nickel clusters or nickel and phosphorus compounds.

First Page

53

Last Page

62

References

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