In this article, the effect of low intensities of laser radiation at a radiation density less than critical on the electrical characteristics of arsenide gallium diode structures with a Schottky barrier Cr-n-n+-GaAs is investigated. The possibility of controlling their parameters at relatively low laser radiation intensities is shown.
"CHANGE OF PARAMETERS OF ARSENIDGALLIUM DIODE STRUCTURES WITH A BARRIER
SCHOTTKI AFTER LASER RADIATION,"
Karakalpak Scientific Journal: Vol. 2
, Article 2.
DOI: ISSN 2010-9075
Available at: https://uzjournals.edu.uz/karsu/vol2/iss1/2