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Karakalpak Scientific Journal

Authors

K Ismailov

Abstract

In this article, the effect of low intensities of laser radiation at a radiation density less than critical on the electrical characteristics of arsenide gallium diode structures with a Schottky barrier Cr-n-n+-GaAs is investigated. The possibility of controlling their parameters at relatively low laser radiation intensities is shown.

First Page

7

Last Page

9

DOI

ISSN 2010-9075

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Physics Commons

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