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Chemical Technology, Control and Management

Abstract

The results of theoretical research and computer simulation of composite transistors made of a semiconductor material with different width of forbidden zone are presented in the article. To study the volt-ampere characteristics of such composite transistors, an interactive computer simulation program was developed in the programming environment of Delphi-6. It is shown that the proposed transistors make it possible to improve manufacturability when it is manufactured industrially. The proposed composite transistors are designed for output stages of power amplifiers, radio transmitting devices, electronic equipment for industrial and automotive electronics.

First Page

42

Last Page

46

References

1. Keith H. Sueker. Power Electronics Design: A Practitioner's Guide. Newnes.

2. Alimova N.B., Aripdjanov M.K., Aripova U.Kh., Atahanov Sh.T., Makhsudov J.T. Programms for semiconductor tehnological prosesses-instruments-circuite // World Conference on Intelligent Systems for Industrial Avtomation. Tashkent - 2000, P. 232-235.

3. Alimova N.B., Aripov H.K., Faziljanov I.R., YArmuhamedov A.A. Programma rascheta VAH bipolyarnogo dreyfovogo tranzistora / Svidetel'stvo Respubliki Uzbekistan № DGU 02064 ot 29.09.2010.

4. Alimova N.B., Aripov H.K., Faziljanov I.R., YArmuhamedov A.A. Programma rascheta VAH geterosostavnogo tranzistora / Svidetel'stvo Respubliki Uzbekistan № DGU 01980 ot 01.07.2010.

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