The results of theoretical research and computer simulation of composite transistors made of a semiconductor material with different width of forbidden zone are presented in the article. To study the volt-ampere characteristics of such composite transistors, an interactive computer simulation program was developed in the programming environment of Delphi-6. It is shown that the proposed transistors make it possible to improve manufacturability when it is manufactured industrially. The proposed composite transistors are designed for output stages of power amplifiers, radio transmitting devices, electronic equipment for industrial and automotive electronics.
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Alimova, N.B and Yarmukhamedov, A.A
"Theoretical research and computer simulation of composite transistors made of a semiconductor material with different width of forbidden zone,"
Chemical Technology, Control and Management: Vol. 2018
, Article 8.
Available at: https://uzjournals.edu.uz/ijctcm/vol2018/iss2/8