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Chemical Technology, Control and Management

Abstract

Presents the results of theoretical research and computer simulation of composite transistors made of a semiconductor material with the same of the forbidden band. To study the volt-ampere characteristics of such composite transistors, an interactive computer simulation program was developed in the programming environment of Delphi-6. It is shown that the proposed transistors make it possible to improve manufacturability when it is manufactured industrially. The proposed composite transistors are designed for the final cascades of power amplifiers, radio transmitting devices.

First Page

90

Last Page

94

References

1. Keith H. Sueker. Power Electronics Design: A Practitioner's Guide. Newnes .1.2 MB PDF. 2. Alimova N.B., Aripdjanov M.K., Aripova U.Kh., Atahanov Sh.T., Makhsudov J.T. Programms for semiconductor tehnological prosesses-instruments-circuite // World Conference on Intelligent Systems for Industrial Avtomation. - Tashkent, 2000. P. 232-235. 3. Alimova N.B., Aripov H.K., Faziljanov I.R., YArmuhamedov A.A. Programma rascheta VAH bipolyarnogo dreyfovogo tranzistora / Svidetel'stvo Respubliki Uzbekistan № DGU 02064 ot 29.09.2010. 4. Alimova N.B., Aripov H.K., Faziljanov I.R., YArmuhamedov A.A. Programma rascheta VAH gomosostavnogo tranzistora / Svidetel'stvo Respubliki Uzbekistan № DGU 02380 ot 15.12.2011.

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