The SnO2 thin films on glass substrate grown by methods of chemical vapor deposition (CVD) in conditions of quasiclosed volume by using a separate evaporator to obtain a saturated are investigated. It is suggested that under these conditions the germ growth occurs by diffusion coalescence. In the IR absorption spectra of SnO2 films, an absorption band in the range of 2500-3800 cm-1 is detected, the amplitude of which is correlated with the conductivity of the grown films.
1. Zaharescu M., Mihaiu S., Zuca S., Matiasovsky K. Contribution to the study of SnO2-based ceramics //J. of Materials Science, Part I: V. 26. 1991. Pp. 1666-1672. Part II: V. 26. 1991. - Pp. 1673-1676.
Gulyamov, A.G.; Xajiev, M.U.; and Juraev, X.N
"INFLUENCE OF THE TEMPERATURE TO THE GROWTH OF THIN FILM SnO2,"
Bulletin of Gulistan State University: Vol. 2019
, Article 1.
Available at: https://uzjournals.edu.uz/gulduvestnik/vol2019/iss2/1