•  
  •  
 

Bulletin of Gulistan State University

Abstract

The epitaxial layers of the (Si2) x (GaP) 1-x solid solution were grown from the liquid phase. It was shown that semiconductor compounds A3B5, when dissolved in metallic solvents, at temperatures below their melting points, are found mainly in the form of molecules and do not break up into separate atoms. The emission of red light was observed when a forward bias of 8-12 V was applied to the nGaP-n+(Si2) x (GaP) 1-x structure, which indicates the energy level formed by silicon molecules in the forbidden zone of gallium phosphide. From the photoluminescence spectrum of the (Si2)x(GaP)1-x solid solution, the value of this level is determined, corresponding to Si2 - Ei = EC - 1,47eV. Analyzing the IVC of pSi – n (Si2)1-X(GaP)X structure, the bandwidth of the energy level of silicon molecules in the forbidden band of gallium phosphide was determined to be 0.14 eV.

First Page

3

Last Page

11

References

Саидов М.С., Кошчанов Э.А., Саидов А.С. Учет электронной структуры ионов и атомов при оценке обобщенного момента элементов. - Изв. АН УзССР, сер.физ-мат.наук,1981. №3. –С. 47

Саидов А.С.Жидкофазная эпитаксия метастабильных варизонных твердых растворов (Si2)1-x(GaP)x. ДАН УзССР,1,14,1990. – С. 78-81.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.