Bulletin of Gulistan State University
Article Title
TRANSFER OF ELECTRIC POWER IN HETERO-STRUCTURE n-GaAs−p-(GaAs)1−x(ZnSe)x(0 ≤ x ≤ 0.80)
Abstract
Epitaxial layers of stable hard mixture of (GaAs)1-x(ZnSe)x of p–type condition and nGaAs sublayers were grown up by using method of liquid-phase epitaxy from limited volume of basic mixture. Characteristics of VAC hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0x 0.80). Basing on double-model of ingection for n-p-p+- structures under condition of minimal spread of concentration of unstable bases, it is possible to explain experimentally the whole period of VAC for hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0 x 0.80).
First Page
9
Last Page
12
References
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А.С. Саидов, М.С. Саидов, Э.А. Кошчанов. Жидкостная эпитаксия компенсированных слоев Арсенида Галлия и твердых растворов на его основе. – Ташкент:«Фан», 1986. - 127 с.
Recommended Citation
Usmonov, Sh.N and Gaimnazarov, K.G
(2018)
"TRANSFER OF ELECTRIC POWER IN HETERO-STRUCTURE n-GaAs−p-(GaAs)1−x(ZnSe)x(0 ≤ x ≤ 0.80),"
Bulletin of Gulistan State University: Vol. 2018
:
Iss.
4
, Article 2.
Available at:
https://uzjournals.edu.uz/gulduvestnik/vol2018/iss4/2