Article Title

TRANSFER OF ELECTRIC POWER IN HETERO-STRUCTURE n-GaAs−p-(GaAs)1−x(ZnSe)x(0 ≤ x ≤ 0.80)

Authors

Sh.N Usmonov, Institute of Physics and Technology "Physics - Sun" of the Academy of Sciences of the Republic of UzbekistanFollow
K.G Gaimnazarov, Gulistan State University

Abstract

Epitaxial layers of stable hard mixture of (GaAs)1-x(ZnSe)x of p–type condition and nGaAs sublayers were grown up by using method of liquid-phase epitaxy from limited volume of basic mixture. Characteristics of VAC hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0x 0.80). Basing on double-model of ingection for n-p-p+- structures under condition of minimal spread of concentration of unstable bases, it is possible to explain experimentally the whole period of VAC for hetero-structures n-GaAs–p-(GaAs)1-x(ZnSe)x (0 x 0.80).

First Page

9

Last Page

12

References

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М.Хансен, К. Андерко. Структуры двойных сплавов. [Пер. с англ.: M.Hansen, K. Anderko. Constitution of binary alloys, (Toronto-London-N.Y., 1958) v. II]. Металлургиздат, М. (1962) т. II. -1488 с.

А.С. Саидов, М.С. Саидов, Э.А. Кошчанов. Жидкостная эпитаксия компенсированных слоев Арсенида Галлия и твердых растворов на его основе. – Ташкент:«Фан», 1986. - 127 с.

Recommended Citation

Usmonov, Sh.N and Gaimnazarov, K.G (2018) "TRANSFER OF ELECTRIC POWER IN HETERO-STRUCTURE n-GaAs−p-(GaAs)1−x(ZnSe)x(0 ≤ x ≤ 0.80)," Bulletin of Gulistan State University: Vol. 2018 : Iss. 4 , Article 2.
Available at: https://uzjournals.edu.uz/gulduvestnik/vol2018/iss4/2