Scientific-technical journal


Single-crystal films of Si1-xGex (0 substrates from a tin solution-melt at a temperature in the range of the onset of crystallization To.c.= 800°С÷1050°С by liquid-phase epitaxy. The dependence of the formation of dislocations at the substrate-film interface on the number and size of the formation of nanoclusters in the solution-melt during the growth of the Si1-xGex solid solution has been studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are presented.

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