•  
  •  
 

Scientific-technical journal

Abstract

Single-crystal films of Si1-xGex (0 substrates from a tin solution-melt at a temperature in the range of the onset of crystallization To.c.= 800°С÷1050°С by liquid-phase epitaxy. The dependence of the formation of dislocations at the substrate-film interface on the number and size of the formation of nanoclusters in the solution-melt during the growth of the Si1-xGex solid solution has been studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are presented.

First Page

51

Last Page

60

References

[1]. Elham M. T. Fadaly, Alain Dijkstra, Jens Renè Suckert, Dorian Ziss, Marvin A.J. van Tilburg, Chenyang Mao, Yizhen Ren, Victor T. van Lange, Ksenia Korzun, Sebastian Kölling, Marcel A. Verheijen, David Busse, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Julian Stangl, Jonathan J. Finley, Silvana Botti, Jos E. M. Haverkort & Erik P. A. M. Bakkers. Direct-bandgap emission from hexagonal Ge and SiGe alloys // Nature. 580, (2020). p205–209.

[2]. A.S.Saidov, Sh.N.Usmonov, K.A.Amonov, Sh.Niyazov, A.I.Khudayberdiyeva. Photothermovoltaic еffect in p-Si−n-(Si2)1-x-y(Ge2)x(ZnSe)y structure. Applied Solar Energy, 2019, Vol.55, No.5, pp. 265–268. doi:10.3103/ S0003701X19050116.

[3]. A.Sh. Razzakov, D.Sh. Kurbanov. Dependence of dislocations on the Si1-xGex solid solution on the growth temperatures at the “solid-liquid” contact phase. RIAK-XII-2020. Republican Conference - 2020.19 May, pp. 275-277.

[4]. B. Sapaev, A. S. Saidov. Investigation of some properties of structures (0≤x≤1) grown from a limited tin solution of the melt by liquid-phase epitaxy. Physics and technology of semiconductors, 2005, volume 39, issue 10, pp. 1183-1188.

[5]. V.M.Andreev, L.M.Dolginov, D.N. Tretyakov. Liquid epitaxy in semiconductor technology. (M, Publishing house Soviet radio, 1975).

[6]. Saidov A.S., Razzakov A.Sh., Risaeva V.A., Koschanov E.A.// Materials Chemistry and physics. 2001. V. 68. P. 1-6.

[7]. S.P. Bocelev, I.E. Maronchuk, Y.E. Maronchuk et al. Crystallization of epitaxial AlGaAs layers from a limited volume of the solution-melt. Informal materials., 1977, 13, N5. pp. 769-772.

[8]. N. Doraiswamy, L.D. Marks: Phil. Mag. 71, 291 (1995).

[9]. P.Rudolph, in: Crystal growth Technology, H.J.Scheel and T.Fukuda (eds.) Wiley(2003).

[10]. Etkins P., J. de Paula. Fizicheskaya ximiya. V 3-x ch. Ch.1: Ravnovesnaya termodinamika/Per.s angl. I.A.Uspenskoy, V.A.Ivanova.-M.:Mir, 2007, 494 s.

[11]. Defay, R. and Prigogine, I. 1966. Surface Tension and Adsorption. London, U.K.: Longmans.

[12]. Ye.D.Shukin, A.V.Persov, Ye.A.Amelina. Kolloidnaya khimiya,-M.:Vissh. shk., 2004, 445s.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.