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Scientific-technical journal

Abstract

The method of exciton luminescence, arising in ions channeling process, for studying of a profile of distribution of the implanted ions in semiconductor crystals of type СdS is offered. The problem about spatial dependence of intensity and a spectrum eksiton-polariton luminescences is solved at excitation of excitons in conditions a ions channeling by small and average energy.

First Page

6

Last Page

13

References

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