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Scientific-technical journal

Abstract

This paper presents the results of a study of the effect of deformation on the photocurrent in silicon compensated by manganese at various illumination intensities. It is shown that the sensitivity of the photocurrent to deformation in silicon compensated by manganese increases significantly, and it is possible to use such a material in the development of strain-sensitive devices

First Page

45

Last Page

47

References

[1] Tursinbaev S.A., Kamalov A.B., Iliev X.M., Tachilin S.A., Kushiev G.A. Tenzosvoystva kremniya s nanoklasterami// Fizika poluprovodnikov i mikroelektronike. Nauchniy jurnal. 2019, tom 1, vipusk 4. Izdatelstvo OOO «VNESHINVESTPROM» g.Tashkent. DOI 10.37681/2181-9947-2019-4 [2] Baxadirxanov M.K., Abduraimov A. Vliyanie uprugogo sjatiya v napravlenii [100] na parametri TZN v kremnii, legirovannom margantsem. // Fizika i texnika poluprovodnikov. - 1986. - T. 20. - Vip. 9. - S. 1561-1564. [3] Polyakova A. L. Deformatsiya poluprovodnikov i poluprovodnikovix priborov. - M. 1979. - 168 s. [4] Baxadыrxanov M.K., Iliev X.M., Zikrillaev X.F. Vliyanie odnoosnogo sjatiya na fotoprovodimost silnokompensirovannogo Si . // Pisma v JTF. - 1998. - T.24. - №22. – str. 23 - 28. [5] Bakhadyrkhanov M.K., Mavlonov G.Kh., Isamov S.B., Iliev Kh.M, Ayupov K.S., Saparniyazova Z.M., and Tachilin S.A. Transport Properties of Silicon Doped with Manganese via Low_Temperature Diffusion // Inorganic Materials. Russia. 2011, Vol. 47, No. 5, pp. 479–483

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