Scientific-technical journal
Article Title
INFLUENCE OF g-QUANTS 60Co ON THE PHOTOELECTRIC PROPERTIES OF SILICON DOPED WITH NICKEL AND RHODIUM
Abstract
The paper investigates the influence of g-radiation on the photosensitivity of compensated silicon. It is shown that due to the introduction of clusters of Ni and Rh impurity atoms into p-type silicon, it is possible to obtain a photosensitive material that is radiation stable in terms of the specific integral current photosensitivity up to a dose of 4.5 × 108 R of 60Co gamma radiation for Si and for Si ~109 R.
First Page
90
Last Page
94
References
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Recommended Citation
Zaynabidinov, S. and Kurbanov, A. O.
(2020)
"INFLUENCE OF g-QUANTS 60Co ON THE PHOTOELECTRIC PROPERTIES OF SILICON DOPED WITH NICKEL AND RHODIUM,"
Scientific-technical journal: Vol. 24
:
Iss.
5
, Article 19.
Available at:
https://uzjournals.edu.uz/ferpi/vol24/iss5/19