Scientific-technical journal
Article Title
THERMOPHOTOEMF OF HOT CHARGE CARRIERS AT p-n-JUNCTIONS UNDER EXPOSURE TO A MICROWAVE FIELD AND LIGHT
Abstract
It is shown that the increase in the current of the p-n junction asymmetric in concentration, caused by the perturbation of the height of the potential barrier and an increase in the recombination current in a strong microwave field, is suppressed under illumination by generated photocarriers, leading to a shift in the I – V characteristic of the p-n junction towards lower current values.
First Page
66
Last Page
70
References
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Recommended Citation
Gulyamov, G.; Dadamirzaev, M. G.; Kosimova, M.; and Uktamova, M.
(2020)
"THERMOPHOTOEMF OF HOT CHARGE CARRIERS AT p-n-JUNCTIONS UNDER EXPOSURE TO A MICROWAVE FIELD AND LIGHT,"
Scientific-technical journal: Vol. 24
:
Iss.
5
, Article 13.
Available at:
https://uzjournals.edu.uz/ferpi/vol24/iss5/13