Scientific-technical journal
Abstract
Single-crystal films of Si1-xGex (0 substrates from a tin solution-melt at a temperature in the range of the onset of crystallization To.c.= 800°С÷1050°С by liquid-phase epitaxy. The dependence of the formation of dislocations at the substrate-film interface on the number and size of the formation of nanoclusters in the solution-melt during the growth of the Si1-xGex solid solution has been studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are presented
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References
[1]. Elham M. T. Fadaly, Alain Dijkstra, Jens Renè Suckert, Dorian Ziss, Marvin A.J. van Tilburg, Chenyang Mao, Yizhen Ren, Victor T. van Lange, Ksenia Korzun, Sebastian Kölling, Marcel A. Verheijen, David Busse, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Julian Stangl, Jonathan J. Finley, Silvana Botti, Jos E. M. Haverkort & Erik P. A. M. Bakkers. Direct-bandgap emission from hexagonal Ge and SiGe alloys // Nature. 580, (2020). p205–209. [2]. A.S.Saidov, Sh.N.Usmonov, K.A.Amonov, Sh.Niyazov, A.I.Khudayberdiyeva. Photothermovoltaic еffect in p-Si−n-(Si2)1-x-y(Ge2)x(ZnSe)y structure. Applied Solar Energy, 2019, Vol.55, No.5, pp. 265–268. doi:10.3103/ S0003701X19050116. [3]. A.Sh. Razzakov, D.Sh. Kurbanov. Dependence of dislocations on the Si1-xGex solid solution on the growth temperatures at the “solid-liquid” contact phase. RIAK-XII-2020. Republican Conference - 2020.19 May, pp. 275-277. [4]. B. Sapaev, A. S. Saidov. Investigation of some properties of structures (0≤x≤1) grown from a limited tin solution of the melt by liquid-phase epitaxy. Physics and technology of semiconductors, 2005, volume 39, issue 10, pp. 1183-1188. [5]. V.M.Andreev, L.M.Dolginov, D.N. Tretyakov. Liquid epitaxy in semiconductor technology. (M, Publishing house Soviet radio, 1975). [6]. Saidov A.S., Razzakov A.Sh., Risaeva V.A., Koschanov E.A.// Materials Chemistry and physics. 2001. V. 68. P. 1-6. [7]. S.P. Bocelev, I.E. Maronchuk, Y.E. Maronchuk et al. Crystallization of epitaxial AlGaAs layers from a limited volume of the solution-melt. Informal materials., 1977, 13, N5. pp. 769-772. [8]. N. Doraiswamy, L.D. Marks: Phil. Mag. 71, 291 (1995). [9]. P.Rudolph, in: Crystal growth Technology, H.J.Scheel and T.Fukuda (eds.) Wiley(2003). [10]. Etkins P., J. de Paula. Fizicheskaya ximiya. V 3-x ch. Ch.1: Ravnovesnaya termodinamika/Per.s angl. I.A.Uspenskoy, V.A.Ivanova.-M.:Mir, 2007, 494 s. [11]. Defay, R. and Prigogine, I. 1966. Surface Tension and Adsorption. London, U.K.: Longmans. [12]. Ye.D.Shukin, A.V.Persov, Ye.A.Amelina. Kolloidnaya khimiya,-M.:Vissh. shk., 2004, 445s
Recommended Citation
Razzokov, A. Sh.; Khakimov, N. Z.; Davletov, I. Y.; Eshchanov, Kh. O.; and Matnazarov, A. R.
(2020)
"OBTAINING A STRUCTURALLY PERFECT SEMICONDUCTOR SOLID SOLUTION SI1-X GEX WITH SPECIFIED ELECTROPHYSICAL AND PHOTOELECTRIC PROPERTIES,"
Scientific-technical journal: Vol. 24
:
Iss.
5
, Article 11.
Available at:
https://uzjournals.edu.uz/ferpi/vol24/iss5/11