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Scientific-technical journal

Abstract

Тhis work proposes scruple and more accessible way of value management through doping with silicon or silver. The influence of impurities on electro physical, photoelectrical and recombination parametres Si и Si.are investigated

First Page

140

Last Page

143

References

[1]. M.K. Baxadirxanov, I.B. Ortikov. Maliy entsiklopedicheskiy spravochnik po poluprovodnikovim materialam. (Tashkent: TashGU. 2006. 199s.) [2]. N.N. Gerasimenko. Ros.xim. J.//2002. T.XL VI, V.5, s.30-41. [3]. M.G. Milvidskiy, V.V. CHaldishev //FTP. 1998, T:32, V.5, s513-522. [4]. A.A. Podolyan, A.B. Nadtochiy, O.A. Korotchenkov // Pisьmo v JTF. // 2012. T. 38, V.9, s.15-22. [5]. S.V. Bulyarskiy, A.S. Ambrozevich, V.V. Svetuxin. T.A. Djabrailov. // Pisьmo v JTF. // 2001. T. 27, V.5, s.57-60

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