The review paper considers photovoltaic processes occurring in homoepitaxial films irradiated both directly from the planar side and from the side of the heavily doped substrate on which they are grown. Primary attention is paid to the applied aspects associated with the use of InAs in multi-cell photoelectronics. The examples demonstrate the versatility and high efficiency of using indium arsenide-MIS structures in multichannel spectrometry and matrix thermal imaging
Weiner, B G.
"ARSENID INDIA IN MULTI-CHANNEL PHOTOELECTRONICS,"
Scientific-technical journal: Vol. 22
, Article 2.
Available at: https://uzjournals.edu.uz/ferpi/vol22/iss5/2