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Scientific-technical journal

Abstract

In heterestructure р- CdTe - SiO2 - Si it is easily realized necessary conduction for existence of optical spectral memory presence asymmetric micro potential barriers and deep equations. Time of a relaxation which happens about 25 days. Heterestructure it is possible to use as opto – electronic memory capable not only to remember signals, but also to summarize them.

First Page

120

Last Page

123

References

[1] M.K. SHeynkman, A.Ya. SHik. FTP. 10. str. 209 (1976)

[2] S.M. Otajonov. Fizicheskaya injeneriya poverxnosti. Ukraina tom 2, №1-2, str 28-31 (2004) ‘

[3] Yu.Yu. Vaytkus, S.M. Otajonov. Poverxnost. Moskva. Nauka 3 str 44-49 (1999) E.A. Abdullaev, Yu.Yu. Vaytkus, S.M. Otajonov. Zapominayushee ustroystvo. Patent. I NDR RUz № 9700869.1. ot 15.03.99 168 str.

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