•  
  •  
 

Scientific reports of Bukhara State University

Abstract

The dependence of the lifetime of charge carriers ()in monocrystalline silicon on the concentration of light copper and post-diffusion cooling is discussed. The results obtained are explained by the redistribution of non-basic carriers at the adhesion level. In the compensated “p-Si” and the control “p-Si”, the relaxation process occurs in different wasy   98s for “p-Si”, and   5s for “p-Si”.At the same time ,with the growth of te initial concentration of charge carriers (in this case boron-B ) in the compensated silicon, an increase (with equal values ) is observed, which is due to a different degree of micro –uniformity in conductivity in the studied samples.

First Page

57

Last Page

61

DOI

10.52297/2181-1466/2020/4/4/2

References

1. Fizicheskie osnovi injenerii defektov v texnologii kremnievix silovix visokovoltnix i svetoizluchayushix struktur: avtoreferat dis. ... doktora fiziko-matematicheskix nauk: 01.04.10 / Sobolev Nikolay Alekseevich; [Mesto zashiti: Fiz.-texn. in-t im. A.F. Ioffe RAN]. - Sankt-Peterburg, 2009. - 34 s.

2. Yunusov M.S., Karimov M., Djalelov M.A. K voprosu o stabilizatsii elektrofizicheskix svoystv v kompensirovannom kremnii pri obluchenii g-kvantami 60So // FTP. - Sankt-Peterburg, 2001. T- 35. №3. S. -317-320.

3. Bannaya V.F., Nikitina Ye.V. Elektricheskiy proboy v chistom n- i p-Si // Fizika i texnika poluprovodnikov, S. Peterburg. 52(3), 2018, S. 291-294.

4. Vliyanie termoobrabotki i legirovaniya na svoystva monokristallicheskogo kremniya: dissertatsiya ... kandidata texnicheskix nauk: 05.27.06 / Timoshina Margarita Igorevna; [Mesto zashiti: Nats. issled. texnol. un-t]. - Moskva, 2011. - 209 s.: il. Texnologiya i oborudovanie dlya proizvodstva poluprovodnikov, materialov i priborov elektronnoy texniki OD 61 12-5/32

5. Kojemyako A.V., Yevseev A.P., Balakshin Yu.V., Shemuxin A.A. https://journals.ioffe.ru/articles/47734 Физика и техника полупроводников. 2019, выпуск 6, С. 810.

6. Kojitov L.V., Timoshina M.I., Pildon V.I., Shepel P.N. «Vliyanie primesey na radiatsionnuyu stoykost kremniya, tezisi dokladov Tretey Rossiyskoy konferentsii «Kremniy-2003», s. 443.

7. Svetlichniy A.M., Polyakov V.V. Vliyanie skorosti nagreva pri bistroy termicheskoy obrabotke poluprovodnikovix plastin na shum diodov //

8. Tashmetov M.Yu., Maxmudov Sh.A., Sulaymonov A.A., Rafikov A.K., Abdurayimov B.J.. Geliotexnika, 2018. Vip. 6. S. 61-64.

9. Makhkamov Sh., Tashmetov М.Yu., Makhmudov Sh.А., Rafikov A.K., Sulaymonov А.А., Mirzarayimov J.Z. Study of thermal stability of life time of charge carriers in overcompensed n-Si // The Ninth International Conference ―Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019. PP. -219-223.

10. Makhkamov Sh., Tashmetov М.Yu., Makhmudov Sh.А., Rafikov A.K., Sulaymonov А.А., Mirzarayimov J.Z. Photoresistors based on compensated Si // The Ninth International Conference ―Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019. PP. -227-229.

11. Taran Yu.N., Kutsova V.Z., Uzlov K.I., Nosko O.A., Kritskaya TV. «Vliyanie legirovaniya na strukturu i svoystva poluprovodnikovogo kremniya» Izvestiya Vuzov, materiali elektronnoy texniki № 1,2003, s. 26-29.

12. Makhkamov Sh., Tashmetov М.Yu., Makhmudov Sh.А., Rafikov A.K., Sulaymonov А.А., Mirzarayimov J.Z. Study of thermal stability of life time of charge carriers in overcompensed n-Si // The Ninth International Conference ―Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019. PP. -219-223.

13. Makhkamov Sh., Tashmetov М.Yu., Makhmudov Sh.А., Rafikov A.K., Sulaymonov А.А., Mirzarayimov J.Z. Photoresistors based on compensated Si // The Ninth International Conference ―Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019. PP. -227-229.

14. Guchel R.I., Krastsov A.A., Stuk A.A.. O vremeni jizni neosnovnix nositeley zaryada v neytronno-legirovannom kremnii // Ximiya v interesax ustoychivogo razvitiya 9. Moskva.2001 g. S. -879-883.

Included in

Life Sciences Commons

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.