Scientific reports of Bukhara State University
Article Title
Abstract
The dependence of the lifetime of charge carriers ()in monocrystalline silicon on the concentration of light copper and post-diffusion cooling is discussed. The results obtained are explained by the redistribution of non-basic carriers at the adhesion level. In the compensated “p-Si” and the control “p-Si”, the relaxation process occurs in different wasy 98s for “p-Si”, and 5s for “p-Si”.At the same time ,with the growth of te initial concentration of charge carriers (in this case boron-B ) in the compensated silicon, an increase (with equal values ) is observed, which is due to a different degree of micro –uniformity in conductivity in the studied samples.
First Page
57
Last Page
61
DOI
10.52297/2181-1466/2020/4/4/2
References
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Recommended Citation
Mirzaraimov, Jakhongir Zokirzhanovich and Makhmudov, Sherzod Akhmadovich
(2020)
"INVESTIGATION OF THE CARRIER LIFETIME IN NEUTRON-DOPED SILICON DEPENDING ON THE CONCENTRATION OF THE INITIAL BORON,"
Scientific reports of Bukhara State University: Vol. 4
:
Iss.
4
, Article 2.
DOI: 10.52297/2181-1466/2020/4/4/2
Available at:
https://uzjournals.edu.uz/buxdu/vol4/iss4/2