Scientific reports of Bukhara State University
Article Title
Abstract
The dependence of the lifetime of charge carriers ()in monocrystalline silicon on the concentration of light copper and post-diffusion cooling is discussed. The results obtained are explained by the redistribution of non-basic carriers at the adhesion level. In the compensated “p-Si” and the control “p-Si”, the relaxation process occurs in different wasy 98s for “p-Si”, and 5s for “p-Si”.At the same time ,with the growth of te initial concentration of charge carriers (in this case boron-B ) in the compensated silicon, an increase (with equal values ) is observed, which is due to a different degree of micro –uniformity in conductivity in the studied samples.
First Page
57
Last Page
61
References
1. Fizicheskie osnovi injenerii defektov v texnologii kremnievix silovix visokovoltnix i svetoizluchayushix struktur: avtoreferat dis. ... doktora fiziko-matematicheskix nauk: 01.04.10 / Sobolev Nikolay Alekseevich; [Mesto zashiti: Fiz.-texn. in-t im. A.F. Ioffe RAN]. - Sankt-Peterburg, 2009. - 34 s.
2. Yunusov M.S., Karimov M., Djalelov M.A. K voprosu o stabilizatsii elektrofizicheskix svoystv v kompensirovannom kremnii pri obluchenii g-kvantami 60So // FTP. - Sankt-Peterburg, 2001. T- 35. №3. S. -317-320.
3. Bannaya V.F., Nikitina Ye.V. Elektricheskiy proboy v chistom n- i p-Si // Fizika i texnika poluprovodnikov, S. Peterburg. 52(3), 2018, S. 291-294.
4. Vliyanie termoobrabotki i legirovaniya na svoystva monokristallicheskogo kremniya: dissertatsiya ... kandidata texnicheskix nauk: 05.27.06 / Timoshina Margarita Igorevna; [Mesto zashiti: Nats. issled. texnol. un-t]. - Moskva, 2011. - 209 s.: il. Texnologiya i oborudovanie dlya proizvodstva poluprovodnikov, materialov i priborov elektronnoy texniki OD 61 12-5/32
5. Kojemyako A.V., Yevseev A.P., Balakshin Yu.V., Shemuxin A.A. https://journals.ioffe.ru/articles/47734 Физика и техника полупроводников. 2019, выпуск 6, С. 810.
6. Kojitov L.V., Timoshina M.I., Pildon V.I., Shepel P.N. «Vliyanie primesey na radiatsionnuyu stoykost kremniya, tezisi dokladov Tretey Rossiyskoy konferentsii «Kremniy-2003», s. 443.
7. Svetlichniy A.M., Polyakov V.V. Vliyanie skorosti nagreva pri bistroy termicheskoy obrabotke poluprovodnikovix plastin na shum diodov //
8. Tashmetov M.Yu., Maxmudov Sh.A., Sulaymonov A.A., Rafikov A.K., Abdurayimov B.J.. Geliotexnika, 2018. Vip. 6. S. 61-64.
9. Makhkamov Sh., Tashmetov М.Yu., Makhmudov Sh.А., Rafikov A.K., Sulaymonov А.А., Mirzarayimov J.Z. Study of thermal stability of life time of charge carriers in overcompensed n-Si // The Ninth International Conference ―Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019. PP. -219-223.
10. Makhkamov Sh., Tashmetov М.Yu., Makhmudov Sh.А., Rafikov A.K., Sulaymonov А.А., Mirzarayimov J.Z. Photoresistors based on compensated Si // The Ninth International Conference ―Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019. PP. -227-229.
11. Taran Yu.N., Kutsova V.Z., Uzlov K.I., Nosko O.A., Kritskaya TV. «Vliyanie legirovaniya na strukturu i svoystva poluprovodnikovogo kremniya» Izvestiya Vuzov, materiali elektronnoy texniki № 1,2003, s. 26-29.
12. Makhkamov Sh., Tashmetov М.Yu., Makhmudov Sh.А., Rafikov A.K., Sulaymonov А.А., Mirzarayimov J.Z. Study of thermal stability of life time of charge carriers in overcompensed n-Si // The Ninth International Conference ―Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019. PP. -219-223.
13. Makhkamov Sh., Tashmetov М.Yu., Makhmudov Sh.А., Rafikov A.K., Sulaymonov А.А., Mirzarayimov J.Z. Photoresistors based on compensated Si // The Ninth International Conference ―Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019. PP. -227-229.
14. Guchel R.I., Krastsov A.A., Stuk A.A.. O vremeni jizni neosnovnix nositeley zaryada v neytronno-legirovannom kremnii // Ximiya v interesax ustoychivogo razvitiya 9. Moskva.2001 g. S. -879-883.
Recommended Citation
Mirzaraimov, Jakhongir Zokirzhanovich and Makhmudov, Sherzod Akhmadovich
(2020)
"INVESTIGATION OF THE CARRIER LIFETIME IN NEUTRON-DOPED SILICON DEPENDING ON THE CONCENTRATION OF THE INITIAL BORON,"
Scientific reports of Bukhara State University: Vol. 4
:
Iss.
4
, Article 2.
Available at:
https://uzjournals.edu.uz/buxdu/vol4/iss4/2