Scientific reports of Bukhara State University
Article Title
Abstract
In this paper, the dependence of stock current on the channel closing voltage in the main parameters of the field transistor (stock), dynamic resistance and channel closing mode has been investigated. The optimal values of the channel thickness are determined depending on the thickness of the p+-n junction volume charge region of the gate and the concentration of carriers that provide high sensitivity.
First Page
7
Last Page
10
DOI
10.52297/2181-1466/2019/3/2/1
References
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Recommended Citation
Dzhuraev, Davron Rakhmanovich and Turaev, Akmal Atayevich
(2020)
"FEATURES OF KEY PARAMETERS OF FIELD TRANSISTORS,"
Scientific reports of Bukhara State University: Vol. 3
:
Iss.
2
, Article 1.
DOI: 10.52297/2181-1466/2019/3/2/1
Available at:
https://uzjournals.edu.uz/buxdu/vol3/iss2/1