Article Title

FEATURES OF KEY PARAMETERS OF FIELD TRANSISTORS

Authors

Davron Rakhmanovich Dzhuraev, professor of the department of physics, BSU
Akmal Atayevich Turaev, senior lecturer of the department of labor education, doctor of philosophy (PhD), BSU

Abstract

In this paper, the dependence of stock current on the channel closing voltage in the main parameters of the field transistor (stock), dynamic resistance and channel closing mode has been investigated. The optimal values of the channel thickness are determined depending on the thickness of the p+-n junction volume charge region of the gate and the concentration of carriers that provide high sensitivity.

First Page

7

Last Page

10

References

1. Turaev A.A., Saidov K.S. Dinamik yuklamali sxemada maydoniy tranzistorning kuchaytirish xossalari //Buxoro davlat universiteti ilmiy axboroti. 2016/4(64). - B. 31-35.

2. Karimov A.V. Mnogofunktsionalnie arsenidgallievie tonkoperexodnie strukturi. - Tashkent: FAN, 1992. - S.94-99.

3. Huque M.A., Tolbert L.M., Blalock B.J., Islam S.K. A high temperature, high-voltage SOI gate driver IC with high output current and on-chip low-power temperature sensor, IMAPS International Symposium on Microelectronics.2009.– P. 220-7.

4. Stepanenko I.P. Osnovi teorii tranzistorov i tranzistornix sxem. -Moskva: Energiya, 1977. -S. 142-143.

5. Karimov A.V., Yodgorova D.M., Kamanova G.O. Photovoltaik silicon structures with two Schottky barriers. Appliedsolarenergy. –2013. -V.49. -№2. –P.67-89.

6. Karimov A.V., Dzhuraev D.R., Kuliev Sh.M., Turaev A.A. Distinctive features of the temperature sensitivity of a transistor structure in a bipolar mode of measurement //Journal of Engineering Physics and Thermophysics.Vol. 89.No. 2.March. 2016. – P.514-517.

Recommended Citation

Dzhuraev, Davron Rakhmanovich and Turaev, Akmal Atayevich (2020) "FEATURES OF KEY PARAMETERS OF FIELD TRANSISTORS," Scientific reports of Bukhara State University: Vol. 3 : Iss. 2 , Article 1.
Available at: https://uzjournals.edu.uz/buxdu/vol3/iss2/1