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Scientific reports of Bukhara State University

Abstract

In this paper, we present the results of studies on the effect of low-dose gamma irradiation (up to 105 rad) on the relaxation of the photoconductivity and the spectral sensitivity of the pSi-nSi1-xSnx (0£х£0.04)-structures. It has been shown that with gamma irradiation, an increase in the relaxation time constant from 55 to 83 μs and an increase in the photosensitivity of the structures in the short-wave region of the radiation spectrum have been observed, which can be attributed to the presence of conductivity fluctuations in the volume of the material.

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References

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