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Scientific reports of Bukhara State University

Abstract

The restoration and change in the lifespan of charge carriers () in р-Sisilicon under thermal and radiation treatment have neen studied in the article. It has been found that the defects responsible for the decrease of  are annealed in the interval 423 ÷ 673 K, and  reaches the maximum value. In samples of p-Si , with increasing radiation dose of Co60 gamma quanta, a change in the value of has been observed.

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References

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