Scientific reports of Bukhara State University


The article presents experimental data which shows that the field-effect transistor with the lower planar gate and open channel in the channel lock mode voltage drain-gate, has more than twice as large photocurrent or one order of magnitude higher photographic sensitivity compared to the known switching modes. In this case the supply voltage is 2-5 V and the operating current is less than 10 microamps, which is in three orders of magnitude smaller compared to the diode mode switching.constructed. It’scharacteristicpropertieshavebeenstudied.

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