Scientific reports of Bukhara State University
Article Title
PHOTOELECTRIC SENSITIVITY OF MULTIFUNCTIONAL SENSOR ON THE OUTDOOR TRANSISTOR
Abstract
The article presents experimental data which shows that the field-effect transistor with the lower planar gate and open channel in the channel lock mode voltage drain-gate, has more than twice as large photocurrent or one order of magnitude higher photographic sensitivity compared to the known switching modes. In this case the supply voltage is 2-5 V and the operating current is less than 10 microamps, which is in three orders of magnitude smaller compared to the diode mode switching.constructed. It’scharacteristicpropertieshavebeenstudied.
This paper has been withdrawn.