"PHOTOELECTRIC SENSITIVITY OF MULTIFUNCTIONAL SENSOR ON THE OUTDOOR TRA" by Davron Rakhmonovich Djuraev and Akmal Atoevich Turaev

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Scientific reports of Bukhara State University

Article Title

PHOTOELECTRIC SENSITIVITY OF MULTIFUNCTIONAL SENSOR ON THE OUTDOOR TRANSISTOR

Authors

Davron Rakhmonovich Djuraev, Professor at the physics department, Bukhara State University, Doctor of physico-mathematical sciences
Akmal Atoevich Turaev, Senior teacher at the Labour training department, Bukhara State University

Abstract

The article presents experimental data which shows that the field-effect transistor with the lower planar gate and open channel in the channel lock mode voltage drain-gate, has more than twice as large photocurrent or one order of magnitude higher photographic sensitivity compared to the known switching modes. In this case the supply voltage is 2-5 V and the operating current is less than 10 microamps, which is in three orders of magnitude smaller compared to the diode mode switching.constructed. It’scharacteristicpropertieshavebeenstudied.

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References

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Recommended Citation

Djuraev, Davron Rakhmonovich and Turaev, Akmal Atoevich (2018) "PHOTOELECTRIC SENSITIVITY OF MULTIFUNCTIONAL SENSOR ON THE OUTDOOR TRANSISTOR," Scientific reports of Bukhara State University: Vol. 1 : Iss. 2 , Article 4.
Available at: https://uzjournals.edu.uz/buxdu/vol1/iss2/4

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