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Scientific Bulletin. Physical and Mathematical Research

Abstract

Metal-oxide semiconductors (SnO2, ZnO, TiO2, etc.) have a wide band gap (~3 eV) and are trans-parent in the visible range of the optical spectrum. Therefore, transparent semiconductor devices (diodes, transistors, integrated circuits, etc.) can be made based on them. There are two peaks in the emission spectrum of the LED. One of the peaks (3.3 eV), apparently, is as-sociated with exciton recombination, and the other peak is associated with recombination through a deep impuri-ty level. The emission spectrum of the LED was ob-served at a direct current of 40 mA. The electrolumines-cence spectrum obtained on the heterostructure at room temperature and at different injection currents is a wide spectrum that extends from UV (400 nm) over the entire visible range with the maximum near the red (about 600 nm). This result may be useful for developers of white light-emitting diodes. Currently, silicon with a band gap of about 1 eV is the main material for solar cells. The ef-fectiveness of silicon solar cells is limited because they convert only part of the visible and infrared range of the wide spectrum of the Sun’s radiation into electricity. The light of the blue and violet parts of the solar spec-trum is not converted into electricity by silicon cells. Metal-oxide semiconductors can be used in devices for converting mechanical energy into electrical energy and electrical energy into light energy, as well as in convert-ers of solar energy into electrical energy.

First Page

58

Last Page

62

DOI

621.315.592.3

References

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