Scientific Bulletin. Physical and Mathematical Research


If we turn to the literature data, it is known that the degradation of CdZnTe / ZnTe and CdZnSe /ZnSe quantum wells and usually includes two types of processes: (i) fast (as called dynamic, by analogy with the degradation of heterostructures based on A3B5 materials) - germination and propagation of extended defects from a GaAs substrate. This process in CdZnSe / ZnSe is slowed down by various technological methods (treatment of a substrate in sulfur; reduction of a damaged layer in a GaAs substrate; deposition of a GaAs epitaxial buffer layer; use of the concept of compensation of bipolar stresses; and (ii) slow, which is initiated in the well itself and leads to the loss of Cd. The decay of the well (Cd drift) occurs, as a rule, at an angle to the well, along the extended defects that were observed with the help of PL and CR with a fairly high spatial resolution, over distances of several microns from the pit, of the latter type (ii) the degradation was mainly diffusive.

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