Scientific Bulletin. Physical and Mathematical Research


In this article, the experimental and theoretical studies on technology for producing the single-crystal semiconductor alloy (GaAs)1–x–у(Gе2)x(ZnSe)y on GaAs substrates with the crystallographic orientation (100) by the liquid-phase epitaxy method is presented. The optimal process conditions of structurally perfect epitaxial layers were determined (cooling rate is 1 oC/min, temperature is 730–640°С, and growth rate ϑ = 0.15 μm/min). The grown epitaxial films possessed thickness values of 10 μm and р-type conductivity with resistivities of 0.1 Ω cm and the concentration of carriers of 5.1·1017 cm-3.

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