In the article the transparency coefficients of the semiconductor structure, consisting of alternating asymmetric potential barriers and wells, where the Bastard condition is taken into account, are calculated. It is shown that in the structure there should be an oscillation of the transmission coefficient of electrons depending on their energy, which is due to the interference of the de Broglie waves reaching the barrier and reflected from the potential barrier. The electronic states of a multilayer semiconductor structure consisting of alternating potential wells and barriers are analyzed. It has been shown that both in the above-barrier and in the barrier passage of electrons, tunneling oscillations arise, which are associated with the interference of the reflected De Broglie waves. The amplitude, in this case, is determined not only by the values of the wave vectors, but from the values of the effective masses of the current carriers. It has also been shown that this oscillation does not disappear even in symmetric structures if they have a difference in the effective masses of current carriers located in two neighbouring regions. It was shown that in an asymmetric (and symmetric, but with different effective masses of electrons in different layers) semiconductor structure, oscillation should be observed depending on the coefficient of transmission through the potential barrier on the electron energy. This oscillation is due to the interference of waves traveling to the barrier and reflected from the potential barrier. Such an interference phenomenon in the structure does not disappear even in a symmetric structure due to the difference in the effective masses of electrons located in different regions of the structure.
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Rasulov, Vohob R.; Rasulov, Rustam Y.; Eshboltaev, Ikbol M.; and Sultonov, Ravshan R.
"SUB-BARRIER AND ABOVE-BARRIER ELECTRON TRANSPORT THROUGH MULTILAYER SEMICONDUCTORS,"
Scientific Bulletin. Physical and Mathematical Research: Vol. 1
, Article 4.
Available at: https://uzjournals.edu.uz/adu/vol1/iss2/4