Differential analysis of known experimental dependences of diffusion parameters from physical parameters of impurity atoms in silicon is made in this work and the semi empirical equations are developed for variety 3d transitive elements. It was supposed that such approach will provide revealing of the physical nature of process of diffusion of atoms. It was necessary to learn a dominating role of known physical parameters of impurity atoms such, as weight, serial number in the table of chemical elements, orbital radius, valence and an electronic configuration of external covers in their definition of the basic diffusion parameters in silicon. 4 new empirical equations and results of calculation in the form of 6 graphic dependences and 2 tables are presented. Values Do (x) and E (x) decrease with growth of serial number and weights primary (Sc, Ti, V, Cr, Mn, Fe, Co and Ni) atoms 3d transitive elements in silicon. Some deviation from the shown law is observed for atoms Cu and Zn. The analysis of physical and chemical indicators of atoms 3d transitive elements in comparison with traditional elements allows to conclude that: the external electronic cover consists of two 4s ва 3d subtotals; 3d the subtotal with orbital number 5 and quantum number 2 has electrons, rotating on the elliptic orbit representing an electronic cloud in shape mutually perpendicularly of located dumbbells; 4s the subtotal with orbital number 1 and quantum number 0 has electronic orbital in the form of sphere; 3d the subtotal is located highly 4s a subtotal, valence shows electrons 3d a subtotal; valence of atoms for Sc, Ti, V, Cr, Mn, Fe, Co, Ni shows electrons 3d a subtotal, and for atoms Cu, Zn shows electrons 4s a subtotal; atoms of group of iron Fe, Co, Ni, located in VIII group of elements have similar properties, their atom radiuses are close to the atom radius of silicon on value. 3d elements in silicon, and also their comparison to the results of the research of diffusion of impurity of some groups of elements the important scientific conclusions allowed to form the research of processes of diffusion executed by the author. First, atoms of the small period 3d elements are simultaneously located in (vertical) groups I, II, III, IV, V, VI, VII, VIII D.I.Mendeleeva's periodic system. In other works published by the author the semi empirical equations are developed for definition of the basic diffusion parameters of atoms I, III - V groups of elements. Results of calculation of the present work, executed by means of the equations (1) - (4), received for 3d elements, are close to values of the settlement data received for the cores diffusion parameters of corresponding elements by means of the equations for atoms I, III - V groups of elements. Secondly, the equations for atoms I, III - V groups of elements allowed to define estimated diffusion parameters of atoms of other nonconventional elements of periodic system.
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Alieva, Zh. R.
"DIFFUSION PARAMETERS OF ATOMS 3d TRANSITIVE ELEMENTS IN SILICON,"
Scientific Bulletin. Physical and Mathematical Research: Vol. 1
, Article 6.
Available at: https://uzjournals.edu.uz/adu/vol1/iss1/6