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Scientific Bulletin. Physical and Mathematical Research

Abstract

This article shows possibility of obtaining the single-crystal substitutional solid solution of p – (Ge2)1-x-y(GaAs1-δBiδ)х(ZnSe)у on germanium substratesby the method of liquid phase epitaxy from the bismuth-containing solution – melt in the atmosphere of hydrogen purified by palladium. Ge washers with the diameter of 20 mm and thickness of ~ 350 μm, with crystallographic orientation (111) n - types of conductivity with a specific resistance of 1 Ω∙cm. Perfect epitaxial layers had mirror surfaces and with the best parameters are grown under the following conditions of technological mode: temperature onset of crystallization – 750 oC, forced cooling rate 1 deg/min. In this case, the rate of crystallization of the layers was 1 deg/min. The grown epitaxial films had thicknesses of 10 μm and p - type conductivity, with specific resistances of 0.3 Ω∙cm and the carrier concentration of 5.8•1017 cm-3. Research of current transfer mechanisms in n– Ge –p – (Ge2)1-x-y(GaAs1-δBiδ)х(ZnSe)уheterostructures at different temperatures, in the temperature range 298 - 398 K in the forward direction, that the I-V characteristics consists of two characteristically plots has been established. Following the initial exponential dependence (up to ~ 1 V) on all I-V characteristics, regardless of temperature, extended sublinear plots appear (in the range from 1 to 2 V). The effect of injection depletion is observed in these areas of the I-V characteristics. The experimentally determined mobility of the main carriers - holes, according to the Hall method, was µp = 378 cm2/V•s, and the value of the mobility of minority carriers (electrons) of the current determined from the expression µn = b • µp = 4800 cm2 /V•s. The dependence of the mobility of the main carriersµp and minority carriers µn on temperature, showed that,in the solid solution of (Ge2)1-x-y(GaAs1-δBiδ)х(ZnSe)у µpdecreases with increasing temperature, and µn increases. This, apparently, allows us to conclude that in this solid solution the dominant role in the mechanism of mobility plays the scattering of carriers on ions of deep impurities. The lifetime of the main carriers was ~ τp = 1.1∙10-8 s, and their diffusion length Lp was 3.3•10-6 m. Under room temperature the value of I0= 12∙10-6 A, which was determined from the experimental points of the I-V characteristics curves. Using the above data, that was calculated the resistivity ρ of the transition layer of the substrate and the epitaxial film, which was 46.35 ∙ 106Ω∙cm under room temperature. It was also determined that with the increase of temperature, the resistivity of the layer between the substrate and the epitaxial film does not change.

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Last Page

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References

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