Scientific Bulletin. Physical and Mathematical Research


The elements of power microelectronics are widely applied in a number of industries, such as atomic industry, aerospace, defence, aviation and many others. They form the basis of radio-electronic devices designed to ensure minimal loss of useful power and eliminate their failure. However, the power silicon diodes manufactured by the standard technology do not fully satisfy the increasing requirements for speed, reliability and maintained capacities due to the technological nonidentity of the parameters of the base area. In this regard, the purpose of this work is to study the possibility of controlling neutron irradiation using the parameters of the base area of silicon diode p+nn+ structures made in Joint-Stock Company «FOTON», which are made of phosphorus doped single-crystal silicon plates with a resistance of 2 Ohm∙cm, where the p+ -type region was created by boron diffusion at 1100 °C for 48 hours. Irradiation of samples with neutrons was carried out at the research reactor IIN-3M. The average neutron energy was ~ 1.5 MeV, and the dosimetry error was ± 20%. Before and after radiation exposure, functional parameters were estimated based on the analysis of the dependence of the barrier capacitance on voltage. It was experimentally established that the base region of the p+nn+ diode after neutron irradiation is divided into two sections. First, a compensated area is created, then the carrier concentration increases close to linear, and then a slight compensation of carriers follows, changing to a small degree by increasing carrier concentrations. As a result, taking into account the thickness of the p+ region equal to 40 μm, and the n+ region of 50 μm and minus the initial thickness of the space charge region of 2 μm, we obtain the thickness of the quasineutral region of the order of 108 μm. After radiation exposure, an additional area 5 μm thick with an intrinsic carrier density is added to the space charge region, followed by a high-resistance 1.5 μm thick region and an area with an increasing carrier density of about 9 μm. As a result, the thickness of the quasineutral n-region after irradiation decreases to 92.5 μm. Thus, in silicon p+nn+ -diode structures with a relatively thick base (100 µm), neutron irradiation can be used to obtain high-resistance regions near the border region with the p+n junction. In particular, the base region (110 μm) of a silicon rectifier – restrictive p+nn+ diode after neutron exposure is divided into two parts, with a gradient (17.5 μm) and uniform distribution of impurities (92.5 μm). At the same time, at the border of the p+n junction, an i-region is created, leading to a decrease in the capacitance of the diode structure.

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1. Ladygin, E.V., Konovalov, M.P., Orlova, M.N., Ruchkin, M.V., Lagov, P.B., Surma, A.M. (2006) Povyshenie bystrodejstviya i radiacionnoj stojkosti silovyh kremnievyh diodov s primeneniem radiacionnogo tekhnologicheskogo processa [Improving the performance and radiation resistance of silicon power diodes using the radiation process]. Voprosy atomnoy nauki i tekhniki. Series: Fizika radiasionnogo vozdeystviya na radioelektronnuyu apparaturu. Vol.1-2. pp. 29-37. 2. Kozlov, V.A., Kozlovskij, V.V. (2001) Legirovanie poluprovodnikov radiacionnymi defektami pri obluchenii protonami i α-chasticami [Doping of semiconductors with radiation defects when irradiated with protons and α-particles] Fizika i tekhnika poluprovodnikov. Vol. 35 (7). pp. 769-795. 3. Hazdra, P., Vobecky, J., Dorschner, H., Brand, K. (2004) Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons. Microelectronics Journal. 35(3). Vol. 35, Issue 3. pp. 249-257. 4. Vobecky, J., Hazdra, P., Zahlava, V. (2003) Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power p-i-n diode. Microelectronics Reliability. Vol. 43, Issue 4. pp. 537-544. 5. Kim, J.H., Lee, D.U., Kim, E.K., Bae, Y.H. (2006) Electrical characterization of proton irradiated p+-n-p+ Si diode. Physica B. Vol. 376-377. pp. 181-184. 6. Rakhmatov, A.Z., Tashmetov, M.Y., Sandler, L.S. (2011) Vliyanie pronikayushchej radiacii na parametry kremnievogo planarnogo vysokochastotnogo vysokovol'tnogo vypryamitel'nogo dioda [Effect of penetrating radiation on the parameters of a silicon planar high-frequency high-voltage rectifier diode]. Voprosy atomnoy nauki i tekhniki. Series: Fizika radiacionnyh povrezhdenyj i radiasionnoye materialovedeniye. 4(98). pp.26-33 7. Rakhmatov, A.Z., Karimov, A.V., Sandler, L.S., Yodgorova, D.M., Skornyakov, S.P. (2013) Vliyanie gamma- i elektronnogo oblucheniya na klyuchevye parametry moshchnyh vysokochastotnyh diffuzionnyh diodov [Effect of gamma and electron irradiation on key parameters of high-power high-frequency diffusion diodes]. Komponenty i tekhnologii. 10. pp.140-142. 8. Fizzoti, F., Colombo, E., Giudice, A.Lo., Manfredotti, C., Medunic, Z., Jaksic, M., Vittone, E. (2007) Measurement of charge collection profi les in irradiated silicon diodes by lateral IBIC technique. Nuclear Instruments and Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms. Vol. 260, Issue 1. pp. 259-263. DOI: 10.1016/j.nimb.2007.02.031 9. Poklonski N.A., Gorbachuk N.I., Shpakovski S.V., Petrov A.V., Lastovskii S.B., Fink D., Wieck A. (2008) Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions. Nuclear Instruments and Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms. Vol. 266. Issue 23. pp. 5007-5012. DOI: 10.1016/j.nimb.2008.09.001 10. Poklonski, N.A., Gorbachuk, N.I., Tarasik, M.I., Shpakovski, S.V., Filipenia, V.A., Skuratov, V.A., Wieck, A., Kołtunowicz, T.N. (2011) Effects of fluences of irradiation with 107 MeV krypton ions on the recovery charge of silicon p+n-diodes. Acta Physica Polonica A. Vol. 120. Issue 1. pp. 111-114. 11. Kozlovskij, V.V., Yemtsev, V.V., Yemtsev, K.V., Strokan, N.B., Ivanov, A.M., Lomasov, V.N., Oganesyan, G.A., Lebedev, A.A. (2008) Vliyanie elektronnogo oblucheniya na skorost' udaleniya nositelej v kremnii i karbide kremniya modifikacii 4N [Effect of electron irradiation on the rate of carrier removal in silicon and silicon carbide of 4H modification]. Fizika i tekhnika poluprovodnikov. Vol. 42. Issue 2. pp. 243-248. 12. Saakyan V.A. (2008) Dejstvie razlichnyh vidov oblucheniya na parametry kremnievyh poluprovodnikovyh priborov [The effect of various types of irradiation of semiconductor devices]. Izvestiya NAN Armeniya. Fizika. Vol. 43. Issue 5. pp. 348-354. 13. Rakhmatov, A.Z. (2012) Vliyanie nejtronnogo izlucheniya na emkostnye harakteristiki kremnievogo ogranichitel'nogo dioda [Influence of neutron radiation on the capacitive characteristics of a silicon restrictive diode]. Peterburgskiy zhurnal elektroniki. Issue 4. pp. 53-55. 14. Muratov A.F., Rakhmatov A.Z., Merkulov A.A., Ismoilov I.R. Sposob izgotovleniya kremniyevykh ogranichiteley napryazheniya [A method of manufacturing silicon voltage limiters]. Patent of the Republic of Uzbekistan No. 5328. Bulletin No. 3 of 09/30/94. 15. Rakhmatov, A.Z., Petrov, D.A., Karimov, A.V., Yodgorova, D.M., Abdulkhaev, O.A. (2012) Influence of neutron radiation on breakdown voltage of silicon voltage limiter. Radioelectronics and Communication Systems. New York. Vol. 55. Issie 7. pp. 332-334. 16. Rakhmatov, A.Z., Karimov, A.V., Yodgorova, D.M., Abdulkhayev, O.A. (2012) Issledovanie vliyaniya nejtronnogo oblucheniya na harakteristicheskie parametry kremnievyh ogranichitelej napryazheniya [Investigation of the effect of neutron irradiation on the characteristic parameters of silicon voltage limiters]. Komponenty i tekhnologii. Issue 5. pp.180-182. 17. Rakhmatov, A.Z. (2014) Effect of Neutron Irradiation on the Structure of Silicon p–n Junctions of Voltage Limiters. Semiconductors. Vol. 48. Issue 7. pp. 935-941. 18. Sze, S.M. with Kwok, K.Ng. (2006) Physics of Semiconductor Devices. 3rd ed. New York: Wiley. 3rd ed. Pages: 880. DOI:10.1002/0470068329 19. Fahrenbruch, A., Bube, R. (1987) Solnechnye elementy [Fundamentals of Solar Cells]. Translation from English. Moscow: Energoatomizdat. 20. Karimov, A.V., Yodgorova, D.M. (2005) Opredeleniye kharakteristik dvukhbar'yernykh fotodiodnykh struktur s metallopoluprovodnikovymi perekhodami [Characterization of two-barrier photodiode structures with metal-semiconductor junctions] Tekhnologiya i konstruirovaniye v elektronnoy apparature. Issue 5. pp. 27-30. 21. Karimov, A.V., Rahmatov, A.Z., Yodgorova, D.M., Kuliev, Sh.M., Bebitov R.R. (2018) Тhe effect of radiation on fundamental parameters of a silicon-based semiconductor structure. World Journal of Engineering Research and Technology. Vol. 4. Issue 1. pp. 78 -81.



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