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Scientific Bulletin. Physical and Mathematical Research

Abstract

The elements of power microelectronics are widely applied in a number of industries, such as atomic industry, aerospace, defence, aviation and many others. They form the basis of radio-electronic devices designed to ensure minimal loss of useful power and eliminate their failure. However, the power silicon diodes manufactured by the standard technology do not fully satisfy the increasing requirements for speed, reliability and maintained capacities due to the technological nonidentity of the parameters of the base area. In this regard, the purpose of this work is to study the possibility of controlling neutron irradiation using the parameters of the base area of silicon diode p+nn+ structures made in Joint-Stock Company «FOTON», which are made of phosphorus doped single-crystal silicon plates with a resistance of 2 Ohm∙cm, where the p+ -type region was created by boron diffusion at 1100 °C for 48 hours. Irradiation of samples with neutrons was carried out at the research reactor IIN-3M. The average neutron energy was ~ 1.5 MeV, and the dosimetry error was ± 20%. Before and after radiation exposure, functional parameters were estimated based on the analysis of the dependence of the barrier capacitance on voltage. It was experimentally established that the base region of the p+nn+ diode after neutron irradiation is divided into two sections. First, a compensated area is created, then the carrier concentration increases close to linear, and then a slight compensation of carriers follows, changing to a small degree by increasing carrier concentrations. As a result, taking into account the thickness of the p+ region equal to 40 μm, and the n+ region of 50 μm and minus the initial thickness of the space charge region of 2 μm, we obtain the thickness of the quasineutral region of the order of 108 μm. After radiation exposure, an additional area 5 μm thick with an intrinsic carrier density is added to the space charge region, followed by a high-resistance 1.5 μm thick region and an area with an increasing carrier density of about 9 μm. As a result, the thickness of the quasineutral n-region after irradiation decreases to 92.5 μm. Thus, in silicon p+nn+ -diode structures with a relatively thick base (100 µm), neutron irradiation can be used to obtain high-resistance regions near the border region with the p+n junction. In particular, the base region (110 μm) of a silicon rectifier – restrictive p+nn+ diode after neutron exposure is divided into two parts, with a gradient (17.5 μm) and uniform distribution of impurities (92.5 μm). At the same time, at the border of the p+n junction, an i-region is created, leading to a decrease in the capacitance of the diode structure.

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References

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