Acta of Turin Polytechnic University in Tashkent
Article Title
Abstract
For the first time was obtained the anisotype heterojunctions p-Cu2ZnSn(Se1-xSx)4/n-Si by sulfurization of precursors previously deposited on a substrate of polycrystalline silicon. We analyze the current-voltage characteristics and discuss the current transfer in created structures. It is shown that tunnel-recombination processes, the tunnel mechanism and currents limited by space charge are typical for direct bias. Under reverse bias the transfer of currents carried by the tunnel and the tunnel-recombination mechanisms.
First Page
43
Last Page
46
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Recommended Citation
Yusupov, А.; Aliev, S.; and Rustamov, A.
(2019)
"Electric Properties of p-Cu2ZnSn(S_(1-x)Se_x)_4/n-Si Heterojunctions for The Creation New of Solar Cells,"
Acta of Turin Polytechnic University in Tashkent: Vol. 9
:
Iss.
2
, Article 6.
Available at:
https://uzjournals.edu.uz/actattpu/vol9/iss2/6