Article Title

Electric Properties of p-Cu2ZnSn(S_(1-x)Se_x)_4/n-Si Heterojunctions for The Creation New of Solar Cells

Authors

А. Yusupov, Andijan Machine-Building institute
S. Aliev, Andijan Machine-Building instituteFollow
A. Rustamov, Andijan Machine-Building institute

Abstract

For the first time was obtained the anisotype heterojunctions p-Cu₂ZnSn(Se_1-xS_x)₄/n-Si by sulfurization of precursors previously deposited on a substrate of polycrystalline silicon. We analyze the current-voltage characteristics and discuss the current transfer in created structures. It is shown that tunnel-recombination processes, the tunnel mechanism and currents limited by space charge are typical for direct bias. Under reverse bias the transfer of currents carried by the tunnel and the tunnel-recombination mechanisms.

First Page

43

Last Page

46

References

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Recommended Citation

Yusupov, А.; Aliev, S.; and Rustamov, A. (2019) "Electric Properties of p-Cu2ZnSn(S_(1-x)Se_x)_4/n-Si Heterojunctions for The Creation New of Solar Cells," Acta of Turin Polytechnic University in Tashkent: Vol. 9 : Iss. 2 , Article 6.
Available at: https://uzjournals.edu.uz/actattpu/vol9/iss2/6