Acta of Turin Polytechnic University in Tashkent


For the first time was obtained the anisotype heterojunctions p-Cu2ZnSn(Se1-xSx)4/n-Si by sulfurization of precursors previously deposited on a substrate of polycrystalline silicon. We analyze the current-voltage characteristics and discuss the current transfer in created structures. It is shown that tunnel-recombination processes, the tunnel mechanism and currents limited by space charge are typical for direct bias. Under reverse bias the transfer of currents carried by the tunnel and the tunnel-recombination mechanisms.

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