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Acta of Turin Polytechnic University in Tashkent

Abstract

Monocrystal films of the Ge1-xSnx solid solution (0

First Page

93

Last Page

100

References

[1]. Gang He and Harry A. Atwater. Interband Transitions in SnxGe1-x Alloys // Physical Review Letters. 1997, Vol. 79, No. 10, pp. 1937-1940. [2]. J. Kouvetakis, J. Menendez, and A.V.G. Chizmeshya. Tin-Based Group IV Semiconductors: New Platforms for Opto- and Microelectronics on Silicon // Annual Review of Materials Research. 2006, Vol. 36, рр. 497-554. [3]. Matthew R. Bauer, John Tolle, Corey Bungay, Andrew V.G. Chizmeshya, David J. Smith, Jose´ Mene´ndez, John Kouvetakis. Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates // Solid State Communications. 2003. Vol. 127, pp.355–359. [4]. Vijay R. D’Costa, Candi S. Cook, A. G. Birdwell, Chris L. Littler, Michael Canonico, Stefan Zollner, John Kouvetakis, and José Menéndez. Optical critical points of thin-film Ge1-ySny alloys: A comparative Ge1-ySny/Ge1-xSix study // Physical Review B. 2006. Vol.73, pp. 125207-1−125207-16. [5]. Y.Y. Fang, J. Tolle, R. Roucka, A. V. G. Chizmeshya, and John Kouvetakis. Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si (100) // Appl. Phys. Lett. 2007. Vol. 90, pp. 061915-1 – 061915-4. [6]. P. Aella, C. Cook, J. Tolle, S. Zollner, A. V. G. Chizmeshya, and J. Kouvetakis. Optical and structural properties of SixSnyGe1-x-y alloys // Appl. Phys. Lett., 2004. Vol. 84, No. 6, рр. 888-890. [7]. Vijay R. D’Costa, Candi S. Cook, Jose´ Mene´ndez, John Tolle, John Kouvetakis, Stefan Zollner. Transferability of optical bowing parameters between binary and ternary group-IV alloys // Solid State Communications. 2006, Vol. 138, pp. 309–313. [8]. J. Menéndeza and J. Kouvetakis. Type-I Ge/Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap // Appl. Phys. Lett., 2004. Vol. 85, No. 7, рр. 1175-1177. [9]. J. D. Gallagher, Chi Xu, Liying Jiang, John Kouvetakis, and Jose Menendez. Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys // Appl. Phys. Lett. 2013, Vol. 103, pp.202104-1 – 202104-5. [10]. V.R. D’Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis and J. Mene´ndez. Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys // Physical Review Letters. 2009. Vol. 102. Pp. 107403-1 – 107403-4. [11]. John Kouvetakis and Andrew V. G. Chizmeshya. New classes of Si-based photonic materials and device architectures via designer molecular routes // Journal of Materials Chemistry, 2007, Vol. 17, pp.1649–1655. [12]. V.M. Andreyev, L.M. Dolginov, D.N. Tretyakov. Jidkostnaya epitaksiya v texnologi poluprovodnikovih priborov, Moscow, Russia: Sov. Radio, 1975, (in Russian) [13]. A.S. Saidov, M.S. Saidov, E. A. Koshchanov. Jidkostnaya epitaksiya kompensirovannih sloyev ArGa i tverdih rastvorov na yego osnove. Tashkent, Uzbekistan: Fan, 1986, (in Russian) [14]. A.S. Saidov, E. A. Koshchanov, A.Sh. Razzakov, D.V. Saparov, V.A. Risayeva. Uzbek physic journal. 1997. № 1. pp. 16-17, (in Russian) [15]. V.I.Stafeyev. Sov.J, Technical Physics (JTF), 28 (8), 1631 (1958), (in Russian) [16]. E.I.Adirovich, P.M.Karageorgiy-Alkalayev, A.Yu.Leyderman. Toki dvoynoy injeksi v poluprovodnikax. Moscow, Russia: Sov. Radio, 1978, (in Russian) [17]. A.Yu.Leyderman. Sov. J, DAN UzSSR. 1989. № 4. pp. 25-27, (in Russian) [18]. Leyderman A.Yu., Minbayeva M.K. Sov. J, Semiconductors (FTP), 1996. vol.30, pp. 1729-1738, (in Russian).

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